Results 1 to 10 of about 192,004 (363)
Structural dynamics at surfaces by ultrafast reflection high-energy electron diffraction [PDF]
Structural DynamicsMany fundamental processes of structural changes at surfaces occur on a pico- or femtosecond timescale. In order to study such ultrafast processes, we have combined modern surface science techniques with fs-laser pulses in a pump–probe scheme.
Michael Horn-von Hoegen
doaj +8 more sources
In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction [PDF]
, 2007 Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth.
J. Schörmann +3 more
semanticscholar +5 more sources
Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts [PDF]
EPJ Web of Conferences, 2013 We present time-resolved RHEED from a laser excited Pb(111) surface using a pulse front tilter for the compensation of the velocity mismatch of electrons and light.
Bovensiepen U. +10 more
doaj +2 more sources
Comparison of azimuthal plots for reflection high-energy positron diffraction (RHEPD) and reflection high-energy electron diffraction (RHEED) for Si(111) surface. [PDF]
Acta Crystallogr A Found Adv, 2020 Azimuthal plots for RHEPD (reflection high-energy positron diffraction) and RHEED (reflection high-energy electron diffraction) were calculated using dynamical diffraction theory and then compared. It was assumed that RHEPD and RHEED azimuthal plots can be collected practically by recording the intensity while rotating the sample around the axis ...
Mitura Z.
europepmc +4 more sources
Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 K [PDF]
Physical Review Letters, 1989 Strong intensity oscillations have been found in RHEED during epitaxial growth at 77 K. This temperature is too low for thermally activated diffusion and establishes that the deposited atom uses its latent heat of condensation to skip across the surface, preferentially coming to rest at growing island edges, to achieve quasi---layer-by-layer growth ...
, Egelhoff, , Jacob
openaire +3 more sources
Surface studies using microprobe reflection high-energy electron diffraction.
Nihon Kessho Gakkaishi, 1988 Si (111) surface topography changed during Si molecular beam epitaxial growth were observed by reflection electron microscope images using microprobe reflection high-energy electron diffraction (RHEED) . When RHEED intensity oscillations were observed at low substrate tempe-rature (350°C), it was found that the shape of atomic steps on the substrate ...
Masakazu Ichikawa
openaire +3 more sources
Reflection High Energy electron Diffraction (RHEED) and Surface Structures
Nihon Kessho Gakkaishi, 1978 A new approach to surface structure studies has been tried by using a new type apparatus of reflection high energy electron diffraction (RHEED) . On the basis of experimental results obtained in studies of Si (111) surfaces, it is concluded that the RHEED method including the new techniques is, in principle, superior to LEED for the surface structure ...
Shozo Ino
openaire +3 more sources
Molecular beam epitaxy of antiperovskite oxides
APL Materials, 2022 Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This Perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO.
H. Nakamura, D. Huang, H. Takagi
doaj +1 more source
Science and Technology of Advanced Materials: Methods, 2022 Reflection high-energy electron diffraction (RHEED) data are important for the in-situ characterization of surface conditions during physical vapor deposition. Surface superstructures obtained by adsorbing exotic atoms onto a clean silicon surface, which
Asako Yoshinari +4 more
doaj +1 more source
Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates
Nanomaterials, 2020 We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy.
Dimosthenis Toliopoulos +10 more
doaj +1 more source