Results 11 to 20 of about 468,062 (374)

The structural analysis possibilities of reflection high energy electron diffraction [PDF]

open access: greenJournal of Physics D: Applied Physics, 2010
Topical review, 26 ...
N. J. C. Ingle   +4 more
openalex   +4 more sources

Surface pole figures by reflection high-energy electron diffraction [PDF]

open access: bronzeApplied Physics Letters, 2006
The authors demonstrated that it is possible to construct a reflection high-energy electron diffraction (RHEED) pole figure of a polycrystalline film by recording multiple RHEED patterns as they rotate the substrate around the surface normal. Since electrons have limited penetration depth, the pole figure constructed is a surface pole figure.
Fu Tang, G.-C. Wang, Toh‐Ming Lu
openalex   +3 more sources

Surface Debye Temperature Measurement with Reflection High-Energy Electron Diffraction [PDF]

open access: yesJournal of Applied Physics, 1996
Measurement of the surface mean-square atomic vibrational amplitude, or equivalently the surface Debye temperature, with reflection high-energy electron diffraction is discussed. Low-index surfaces of lead are used as examples.
Elsayed-Ali, H. E.
core   +5 more sources

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction [PDF]

open access: green, 2008
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy.
Sergio Fernández‐Garrido   +3 more
openalex   +3 more sources

In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction [PDF]

open access: yes, 2007
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth.
As, D. J.   +3 more
core   +2 more sources

In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy [PDF]

open access: goldNanoscale Research Letters, 2010
Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM).
Sanduijav B, Matei DG, Springholz G
doaj   +2 more sources

A fast and accurate computation method for reflective diffraction simulations [PDF]

open access: yesarXiv, 2023
We present a new computation method for simulating reflection high-energy electron diffraction and the total-reflection high-energy positron diffraction experiments. The two experiments are used commonly for the structural analysis of material surface.
Hoshi, Takeo   +2 more
arxiv   +2 more sources

A study of InxGa1−xN growth by reflection high-energy electron diffraction [PDF]

open access: greenJournal of Applied Physics, 2004
Epitaxial growth of InxGa1−xN alloys on GaN(0001) by plasma-assisted molecular-beam epitaxy is investigated using the in situ reflection high-energy electron-diffraction (RHEED) technique. Based on RHEED pattern changes over time, the transition of growth mode from two-dimensional (2D) nucleation to three-dimensional islanding is studied for various ...
Yang Liu   +4 more
openalex   +5 more sources

Implementation and performance of a fiber-coupled CMOS camera in an ultrafast reflective high-energy electron diffraction experiment [PDF]

open access: yesStructural Dynamics
The implementation of a monolithic fiber-optically coupled CMOS-based TemCam-XF416 camera into our ultra-high vacuum (UHV) ultrafast reflection high-energy electron diffraction setup is reported.
Jonas D. Fortmann   +4 more
doaj   +2 more sources

Observations on intensity oscillations in reflection high-energy electron diffraction during epitaxial growth of Si(001) and Ge(001)

open access: green, 1986
Intensity oscillations have been found in the specular beam of reflection high‐energy electron diffraction patterns during growth of Si(001) and Ge(001) by molecular beam epitaxy.
J. Aarts, W. M. Gerits, P.K. Larsen
openalex   +3 more sources

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