Results 11 to 20 of about 134,069 (317)
Computer Physics Communications, 2022 11 pages, 6 figures.
Takashi Hanada +3 more
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Reflection high-energy electron diffraction and surface atomic structures [PDF]
Acta Crystallographica Section A Foundations of Crystallography, 1996 A. Ichimaya
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Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 K [PDF]
Physical Review Letters, 1989 Strong intensity oscillations have been found in RHEED during epitaxial growth at 77 K. This temperature is too low for thermally activated diffusion and establishes that the deposited atom uses its latent heat of condensation to skip across the surface, preferentially coming to rest at growing island edges, to achieve quasi---layer-by-layer growth ...
W. F. Egelhoff, I. Jacob
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Molecular beam epitaxy of antiperovskite oxides
APL Materials, 2022 Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This Perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO.
H. Nakamura, D. Huang, H. Takagi
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Science and Technology of Advanced Materials: Methods, 2022 Reflection high-energy electron diffraction (RHEED) data are important for the in-situ characterization of surface conditions during physical vapor deposition. Surface superstructures obtained by adsorbing exotic atoms onto a clean silicon surface, which
Asako Yoshinari +4 more
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Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates
Nanomaterials, 2020 We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy.
Dimosthenis Toliopoulos +10 more
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Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy [PDF]
, 1991 Using a conventional reflection high-energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2,3 and Ge L2,3 core losses with reflection ...
Ahn, Channing C., Atwater, Harry A.
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Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry [PDF]
, 1995 Measurements of local order are demonstrated in Sn-containing alloys and epitaxial monolayer thickness films by analysis of extended-edge energy loss fine structure (EXELFS) data obtained by reflection electron energy loss spectrometry (REELS).
Ahn, Channing C. +4 more
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Ozone detection by means of semiconductor gas sensors based on palladium (II) oxide
Конденсированные среды и межфазные границы, 2021 Thin film semiconductor sensors based on palladium oxide were produced to analyse the concentration of ozone in the air. The palladium oxide films were obtained by means of thermal oxidation of ~ 20-30 nm metal in air at various temperatures.
Stanislav V. Ryabtsev +5 more
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Magnetic and electromagnetic properties of Fe/Fe2–3N composites prepared by high-energy ball milling
Journal of Materials Research and Technology, 2020 In this study, high-energy ball milling processes were adopted to prepare Fe/Fe2–3N composites. The phase composition and microstructure of the composites were characterized by X-ray diffraction, scanning electron microscopy and high-resolution ...
Mengying Gong +5 more
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