Results 251 to 260 of about 192,004 (363)

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

open access: yesAdvanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell   +5 more
wiley   +1 more source

Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution. [PDF]

open access: yesNanomicro Lett
Zhai R   +9 more
europepmc   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

open access: yesAdvanced Functional Materials, EarlyView.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng   +5 more
wiley   +1 more source

Bio‐Inspired Nanoarchitected LiFePO4 Cathodes

open access: yesAdvanced Functional Materials, EarlyView.
Lithium iron phosphate (LFP) is synthesized using a bio‐inspired method, using acidic macromolecules similar to those found in many calcareous mineralized organisms to modulate the morphology and crystal growth of LFP‐carbon composite particles. The observations from this process indicate a non‐classical crystallization process, which subsequently ...
Parawee Pumwongpitak   +8 more
wiley   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

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