Results 21 to 30 of about 192,004 (363)

The Effect of RF-Plasma Power on the Growth of III-Nitride Materials [PDF]

Eurasian Journal of Science and Engineering, 2019
In this study, n-InGaN nanorods were grown directly on p-type Si (111) substrates by plasma- assisted molecular beam epitaxy (PA-MBE). The crystal structure is investigated using the reflection of high-energy electron diffraction patterns.
Samir Mustafa Hamad, Azeez Abdullah Barzinjy , Haidar Jalal Ismael, Mohammed A. Hamad   +3 more
doaj   +1 more source

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction [PDF]

, 2008
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy.
S. Fernández-Garrido, G. Koblmüller, E. Calleja, J. Speck   +3 more
semanticscholar   +1 more source

Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates [PDF]

, 2013
Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition.
Adari R., Akinaga H., Aldous J. D., Aldous J. D., Aldous J. D., Amemiya T., Andrew Dobbie, Christopher F. McConville, Christopher W. Burrows, Coehoorn R., Dash S. P., Dau M.-T., David R. Leadley, De Padova P., Deffke U., Dobbie A., Fraser E. D., Gavin R. Bell, Han G. C., Hatfield S. A., Hatfield S. A., Hirayama M., Huy N. V., Ian Maskery, James J. Mudd, Jeon K.-R., Kästner M., Maksym Myronov, Marc Walker, Martin R. Lees, Mattoso N., Okita T., Olive-Mendez S., Ono K., Oshima M., Ouerghi A., Schmidt G., Shen C., Shikoh E., Stuart B. Wilkins, Tatsuoka H., Teichert S., Thomas P. A. Hase, van ’t Erve O. M. J., Willis B. T. M., Zhang H.   +45 more
core   +1 more source

Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics [PDF]

, 2011
In this article, an overview of the fabrication and properties of high quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while ...
, A Vailionis, Aruta C, Chikazumi S, D H A Blank, Dessau D S, E P Houwman, G Koster, G Rijnders, G van Tendeloo, H Boschker, J Verbeeck, M Huijben, M Luysberg, S Bals, S van Aert, van der Pauw L J   +16 more
core   +10 more sources

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

AIP Advances, 2013
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by ...
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo   +13 more
doaj   +1 more source

Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

AIP Advances, 2015
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy.
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi   +6 more
doaj   +1 more source

GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction

, 1997
N. Grandjean, J. Massies
openalex   +3 more sources

Annealing-induced Fe oxide nanostructures on GaAs [PDF]

, 2005
We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing.
Ahmad, E, Lu, Y X, Thompson, S M, Xu, Y B   +3 more
core   +1 more source

The structural analysis possibilities of reflection high energy electron diffraction [PDF]

Journal of Physics D: Applied Physics, 2010
Topical review, 26 ...
Ingle, N. J. C., Yuskauskas, A., Wicks, R., Paul, M., Leung, S.   +4 more
openaire   +2 more sources

In situ reflection electron energy loss spectroscopy measurements of low temperature surface cleaning for Si molecular beam epitaxy [PDF]

, 1993
In situ analysis of hydrocarbon desorption from hydrogen terminated Si(100) surfaces was performed in a silicon molecular beam epitaxy system, using reflection electron energy loss spectroscopy, in conjunction with conventional reflection high energy ...
Ahn, Channing C., Atwater, Harry A., Nikzad, Shouleh, Smith, Aimee L., Wong, Selmer S.   +4 more
core   +1 more source