Reflection high-energy electron diffraction and surface atomic structures [PDF]
Acta Crystallographica Section A Foundations of Crystallography, 1996 A. Ichimaya
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Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 K [PDF]
Physical Review Letters, 1989 Strong intensity oscillations have been found in RHEED during epitaxial growth at 77 K. This temperature is too low for thermally activated diffusion and establishes that the deposited atom uses its latent heat of condensation to skip across the surface, preferentially coming to rest at growing island edges, to achieve quasi---layer-by-layer growth ...
W. F. Egelhoff, I. Jacob
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Some New Techniques in Reflection High Energy Electron Diffraction (RHEED) Application to Surface Structure Studies [PDF]
, 1977 Shozo Ino
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Molecular beam epitaxy of antiperovskite oxides
APL Materials, 2022 Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This Perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO.
H. Nakamura, D. Huang, H. Takagi
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Science and Technology of Advanced Materials: Methods, 2022 Reflection high-energy electron diffraction (RHEED) data are important for the in-situ characterization of surface conditions during physical vapor deposition. Surface superstructures obtained by adsorbing exotic atoms onto a clean silicon surface, which
Asako Yoshinari +4 more
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Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates
Nanomaterials, 2020 We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy.
Dimosthenis Toliopoulos +10 more
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Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy [PDF]
, 1991 Using a conventional reflection high-energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2,3 and Ge L2,3 core losses with reflection ...
Ahn, Channing C., Atwater, Harry A.
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Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry [PDF]
, 1995 Measurements of local order are demonstrated in Sn-containing alloys and epitaxial monolayer thickness films by analysis of extended-edge energy loss fine structure (EXELFS) data obtained by reflection electron energy loss spectrometry (REELS).
Ahn, Channing C. +4 more
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Pulsed laser deposition with simultaneous in situ real-time monitoring of optical spectroscopic ellipsometry and reflection high-energy electron diffraction. [PDF]
Review of Scientific Instruments, 2013 We present a pulsed laser deposition system that can monitor growth by simultaneously using in situ optical spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED).
J. Gruenewald, J. Nichols, S. Seo
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Complex oxide growth using simultaneous in situ reflection high-energy electron diffraction and x-ray reflectivity: When is one layer complete? [PDF]
, 2014 During layer-by-layer homoepitaxial growth, both the Reflection High-Energy Electron Diffraction (RHEED) intensity and the x-ray reflection intensity will oscillate, and each complete oscillation indicates the addition of one monolayer of material ...
M. C.Sullivan +6 more
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