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Reflection High-Energy Electron Diffraction
, 2019In this paper, we present an overview of the diffraction technique known as reflection highenergy electron diffraction (RHEED). We discuss an elementary approach behind the analysis of experimentally obtained RHEED patterns (including patterns we ...
Nassim Derriche+4 more
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Reflection High-Energy Electron Diffraction
, 2012The fundamentals, experimental techniques, and practical aspects of reflection high-energy electron diffraction (RHEED) are described with some examples of observations.
S. Hasegawa
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An accurate dynamical electron diffraction algorithm for reflection high-energy electron diffraction
Philosophical Magazine, 2015The conventional multislice method (CMS) method, one of the most popular dynamical electron diffraction calculation procedures in transmission electron microscopy, was introduced to calculate reflection high-energy electron diffraction (RHEED) as it is well adapted to deal with the deviations from the periodicity in the direction parallel to the ...
G.W. Zhou+4 more
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Reflection high-energy electron diffraction from carbon nanotubes [PDF]
Using reflection high-energy electron diffraction, we have observed diffraction patterns from both vertically aligned and randomly oriented multiwalled carbon nanotube samples. The patterns, for both samples, consist of rings and are similar to the patterns observed in x-ray diffraction from multiwalled carbon nanotubes.
P. M. Ajayan+6 more
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ACS Nano, 2014
Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy.
R. Vasudevan+3 more
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Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy.
R. Vasudevan+3 more
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Weissenberg Reflection High-Energy Electron Diffraction for Surface Crystallography
Physical Review Letters, 2006The principle of a Weissenberg camera is applied to surface crystallographic analysis by reflection high-energy electron diffraction. By removing inelastic electrons and measuring hundreds of patterns as a function of sample rotation angle phi, kinematical analysis can be performed over a large volume of reciprocal space.
Tomoyuki Yamazaki+3 more
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Analysis of reflection high energy electron diffraction azimuthal plots
Physical Review Letters, 1993Reflection high energy electron diffraction data collected in the form of an azimuthal plot are analyzed theoretically for the first time. Experimental results for Si(111) at a glancing angle satisfying a Bragg condition are taken from the literature. Calculations are carried out within a multiple scattering approach.
Mitura, Z, Maksym, PA
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, 1985
A simple extension of the reflection high‐energy electron diffraction oscillation technique to vicinal surfaces provides a means of studying surface diffusion during molecular beam epitaxial growth.
J. Neave, P. Dobson, B. Joyce, J. Zhang
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A simple extension of the reflection high‐energy electron diffraction oscillation technique to vicinal surfaces provides a means of studying surface diffusion during molecular beam epitaxial growth.
J. Neave, P. Dobson, B. Joyce, J. Zhang
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Theory of reflection high-energy electron diffraction
Physical Review B, 1990We present a new scheme to calculate reflection high-energy electron-diffraction rocking curves based on the technique to solve coupled second-order differential equations developed by Magnus and others. Furthermore, a layer-doubling method, which was originally developed for the low-energy electron diffraction, is incorporated into this scheme very ...
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Inelastic electron analysis in reflection high-energy electron diffraction condition
Applied Surface Science, 2003Abstract Electron energy loss spectra (EELS) has been measured under reflection high-energy electron diffraction (RHEED) condition using a newly developed energy filtered RHEED measurement system to investigate incident and exit angle dependence of plasmon excitation process. As a specimen, clean Si(1 1 1)7×7 surface is used.
Hitoshi Nakahara+2 more
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