Results 331 to 340 of about 192,004 (363)

Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

, 1985
J. Neave, P. Dobson, B. Joyce, J. Zhang
semanticscholar   +1 more source

Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system

, 1985
T. Kojima, N. Kawai, T. Nakagawa, K. Ohta, T. Sakamoto, M. Kawashima   +5 more
semanticscholar   +1 more source

Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxides.

Physical Review Letters, 1990
T. Terashima, Y. Bandō, K. Iijima, K. Yamamoto, K. Hirata, K. Hayashi, K. Kamigaki, H. Terauchi   +7 more
semanticscholar   +1 more source

In-situ monitoring during pulsed laser deposition of complex oxides using reflection high energy electron diffraction under high oxygen pressure

, 1997
G. Rijnders, G. Koster, D. Blank, H. Rogalla   +3 more
semanticscholar   +1 more source

Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001).

Physical Review B (Condensed Matter), 1992
Shitara, Vvedensky, Wilby, Zhang, Neave, Joyce   +5 more
semanticscholar   +1 more source

Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometry

, 1990
H. Farrell, C. J. Palmstro
semanticscholar   +1 more source

Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth

, 1985
T. Sakamoto, N. Kawai, T. Nakagawa, K. Ohta, Kojima Takeshi   +4 more
semanticscholar   +1 more source

A review of the geometrical fundamentals of reflection high‐energy electron diffraction with application to silicon surfaces

, 1990
J. Mahan, K. Geib, G. Y. Robinson, Robert G. Long   +3 more
semanticscholar   +1 more source

Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study

, 1985
A. Madhukar, T. C. Lee, M. Y. Yen, Ping Chen, J. Y. Kim, S. Ghaisas, P. Newman   +6 more
semanticscholar   +1 more source

Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffraction.

Physical Review Letters, 1993
Stroscio, Pierce, Dragoset
semanticscholar   +1 more source