Results 331 to 340 of about 468,062 (374)

Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system

, 1985
Reflection high‐energy electron diffraction (RHEED) intensity oscillation during sublimation of GaAs is observed at high substrate temperatures above 690 °C. This post‐growth RHEED intensity oscillation suggests that the sublimation occurs layer by layer.
T. Kojima, N. Kawai, T. Nakagawa, K. Ohta, T. Sakamoto, M. Kawashima   +5 more
semanticscholar   +1 more source

The effect of refraction in reflection high-energy electron diffraction

Journal of Crystal Growth, 1995
Abstract Kinematical calculations on reflection high-energy electron diffraction can be refined if absorption and refraction of the electron beam are taken into account. Results of kinematical calculations are presented in comparison with experimental data. There is good agreement.
openaire   +2 more sources

Time-resolved reflection high-energy electron diffraction

SPIE Proceedings, 1999
A review of time-resolved reflection high-energy electron diffraction studies of approximately 100-ps laser heated surfaces is given. The dynamic structural behavior is shown to be strongly dependent on surface orientation and is different from that observed under slow heating conditions.
openaire   +2 more sources

COMPUTATIONAL THEORY OF REFLECTION HIGH ENERGY ELECTRON DIFFRACTION

Surface Review and Letters, 1997
The theory of reflection high energy electron diffraction (RHEED) by crystal surfaces is reviewed, with special emphasis on computational techniques. Multiple scattering is accounted for by solving the Schrödinger equation exactly to obtain the amplitudes of the diffracted beams above the surface.
openaire   +2 more sources

A review of the geometrical fundamentals of reflection high‐energy electron diffraction with application to silicon surfaces

, 1990
Reflection high‐energy electron diffraction (RHEED) is an experimentally simple technique, and yet a powerful one for examining the structure of a substrate surface and for monitoring the surface crystal structure and the crystallographic orientation of ...
J. Mahan, K. Geib, G. Y. Robinson, Robert G. Long   +3 more
semanticscholar   +1 more source

Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffraction.

Physical Review Letters, 1993
We report real space views of the homoepitaxial growth of Fe on Fe(001) whiskers observed by scanning tunneling microscopy. A measure of the surface diffusion of the Fe atoms is obtained over the temperature range of 20-250 o C.
Stroscio, Pierce, Dragoset
semanticscholar   +1 more source

Growth kinetics and step density in reflection high‐energy electron diffraction during molecular‐beam epitaxy

, 1988
The kinetics of molecular‐beam epitaxy are examined by means of Monte Carlo simulations in combination with a new approach for monitoring surface growth, i.e., by calculating the evolution of the surface step density. The evolution of the step density is
S. Clarke, D. Vvedensky
semanticscholar   +1 more source

The Origin of Resonance Phenomena in Reflection High-Energy Electron Diffraction

MRS Proceedings, 1995
AbstractResonance scattering of high-energy electrons is responsible for the appearance of bright features observed in reflection high-energy electron diffraction (RHEED) patterns and has found numerous applications in reflection electron microscopy and in RHEED studies of dynamics of molecular beam epitaxial growth of semiconductor crystals.
M. J. Whelan, Sergei L. Dudarev
openaire   +2 more sources

Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth

, 1985
Reflection high‐energy electron diffraction (RHEED) intensity oscillations during Si molecular beam epitaxy (MBE) are observed for the first time. It is revealed that stable RHEED intensity oscillation exists during the MBE growth of a single‐element ...
T. Sakamoto, N. Kawai, T. Nakagawa, K. Ohta, Kojima Takeshi   +4 more
semanticscholar   +1 more source

Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction

, 1998
We report a reflection high energy electron diffraction study of InAs self-organized quantum dots grown on GaAs (001). We observe facet reflections along the [310] and [130] azimuths, which indicate that the quantum dot shape is pyramidal with bounding ...
Hao Lee, R. Lowe-Webb, Weidong Yang, P. Sercel   +3 more
semanticscholar   +1 more source