Results 341 to 350 of about 468,062 (374)

Surface Studies by Low-Energy Electron Diffraction and Reflection High-Energy-Electron Diffraction

2012
In this chapter, we present the basic concepts of the low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to provide an overview of the exploitation of these instrumental methods for analyzing the surfaces of technologically important III–V compound semiconductors.
Janusz Sadowski, Pekka Laukkanen, Pekka Laukkanen, Mircea Guina   +3 more
openaire   +3 more sources

A differential reflection high energy electron diffraction measurement system

Review of Scientific Instruments, 1991
An economical, real-time differential reflection high energy electron diffraction (RHEED) measurement system which is effective in a high-noise environment is described. Two fiber optic cables sample the RHEED intensities from the phosphorescent screen in a molecular beam epitaxy (MBE) growth chamber.
T. P. Chin, C. W. Tu, C. E. Chang
openaire   +2 more sources

Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study

, 1985
Measurements of the time‐dependent intensity in reflection high‐energy electron diffraction during [100] growth of AlxGa1−x As on GaAs (normal interface) and of GaAs on AlxGa1−x As (inverted interface) are reported for such growth on static, dynamic, and
A. Madhukar, T. C. Lee, M. Y. Yen, Ping Chen, J. Y. Kim, S. Ghaisas, P. Newman   +6 more
semanticscholar   +1 more source

Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high‐energy electron diffraction

, 1990
Microscopic distributions of growth rates on GaAs(001) layers next to (111)A and (111)B surfaces were measured in real time during molecular beam epitaxy growth by scanning microprobe reflection high‐energy electron diffraction.
M. Hata, T. Isu, A. Watanabe, Y. Katayama   +3 more
semanticscholar   +1 more source

An Introduction to Reflection High Energy Electron Diffraction

1988
Reflection high energy electron diffraction (RHEED) uses electrons of energy from a few keV to ∼100 keV directed at low angles of incidence (0.01 to 0.1 rad) with respect to a surface. RHEED is a fairly old technique. There are several examples1,2 of its use in the 1930’s and it was extensively employed for corrosion studies and epitaxial growth in the
openaire   +2 more sources

Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity

, 1985
The critical role of the group V pressure in controlling the dynamic growth front morphology during molecular beam epitaxial growth of III‐V compounds is demonstrated via computer simulations based upon a configuration‐dependent reactive incorporation ...
A. Madhukar, S. Ghaisas
semanticscholar   +1 more source

Observation of alternating reconstructions of silicon (001) 2 × 1 and 1 × 2 using reflection high-energy electron diffraction during molecular beam epitaxy

, 1986
Layer‐by‐layer alternating surface reconstructions of Si(001) 2×1 and 1×2 have been observed for the first time using reflection high‐energy electron diffraction (RHEED) during molecular beam epitaxy. RHEED intensity oscillations of the specular beam and
T. Sakamoto, T. Kawamura, G. Hashiguchi
semanticscholar   +1 more source

Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high‐energy electron diffraction

, 1987
Si(111) surface topography changes during Si molecular beam epitaxial growth were observed by reflection electron microscope images using microprobe reflection high‐energy electron diffraction (RHEED).
M. Ichikawa, T. Doi
semanticscholar   +1 more source

New Tilting Mechanism of Electron Gun for Reflection High-Energy Electron Diffraction

Japanese Journal of Applied Physics, 1995
A new type of mechanism for tilting a reflection high-energy electron diffraction (RHEED) gun has been designed and constructed, which enables us to change the glancing angle of the primary electron beam when the specimen surface is located not only at a fixed position but also is moved to other positions.
Toshihiro Ichikawa, Hisashi Oyama
openaire   +2 more sources

Real‐time observation of molecular beam epitaxy growth on mesa‐etched GaAs substrates by scanning microprobe reflection high‐energy electron diffraction

, 1990
Microscopic distribution of growth rates on mesa‐etched GaAs(001) wafers was measured in real time during molecular beam epitaxy growth by scanning microprobe reflection high‐energy electron diffraction.
M. Hata, T. Isu, A. Watanabe, Y. Katayama   +3 more
semanticscholar   +1 more source