Results 351 to 360 of about 468,062 (374)

Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system

Applied Physics Letters, 1992
Surface structures occurring as a function of coverage during the deposition of Si on GaAs (001) and the further changes brought about by subsequent GaAs overgrowth using molecular beam epitaxy (MBE) have been studied with reflection high-energy electron diffraction (RHEED).
B.A. Joyce, M. J. Ashwin, R. C. Newman, M. R. Fahy, J. J. Harris   +4 more
openaire   +2 more sources

STRUCTURAL ANALYSIS OF CRYSTAL SURFACES BY REFLECTION HIGH ENERGY ELECTRON DIFFRACTION

Surface Review and Letters, 1997
For surface structure determinations by reflection high energy electron diffraction (RHEED), intensity rocking curves are analyzed through RHEED dynamical calculations. Since fast electrons are scattered dominantly in the forward direction by atoms, dynamic diffraction mainly occurs in the forward direction.
Ayahiko Ichimiya, Yusuke Ohno, Yoshimi Horio   +2 more
openaire   +2 more sources

Development of Energy-Filtered Reflection High-Energy Electron Diffraction Apparatus

Japanese Journal of Applied Physics, 1995
A new type of reflection high-energy electron diffraction (RHEED) apparatus equipped with an energy filter has been developed. The apparatus can exclude the inelastically scattered electrons from the RHEED pattern for the first time. Performance of the apparatus is demonstrated using a Si(001)2×1 surface. The energy-filtered RHEED (EF-RHEED)
Ayahiko Ichimiya, Katsuyuki Shiba, Yoshimi Horio, Yasuyuki Hashimoto   +3 more
openaire   +2 more sources

Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy

, 1987
The observations of a damped intensity oscillation using reflection high‐energy electron diffraction during the growth of GaAs by chemical beam epitaxy using triethylgallium and arsine are reported.
T. Chiu, W. Tsang, J. Cunningham, A. Robertson   +3 more
semanticscholar   +1 more source

Reflection high-energy electron diffraction study on the SrTiO3 surface structure

Physica C: Superconductivity, 1994
Abstract This paper reports a reflection high-energy electron diffraction investigation of the surface structures of the (001) and (110) crystal faces of SrTiO 3 given various surface treatments. The as-polished surface has a (1×1) unreconstructed structure on both the (001) and (110) crystal faces. The vacuum annealed surface has a two-domain (2×1)
Michio Naito, Hisashi Sato
openaire   +2 more sources

Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)

, 1986
A systematic examination of the influence of each growth parameter on the surface kinetic processes in GaAs molecular beam epitaxy growth has been undertaken employing reflection‐high‐energy‐electron‐diffraction intensity dynamics measurement on GaAs(100)
P. Chen, J. Y. Kim, A. Madhukar, N. M. Cho   +3 more
semanticscholar   +1 more source

Reflection high-energy electron diffraction from stepped surfaces

Physics Letters A, 1979
Abstract Recent experimental results on the diffraction of high-energy electrons from vicinal surfaces have been shown to be most useful in evaluating surface geometries. A computational study of a stepped metal surface is presented and the results are discussed.
openaire   +2 more sources

Phase Manipulation of Reflection High-Energy Electron Diffraction Intensity Oscillations

Europhysics Letters (EPL), 1994
The nucleation and island growth behaviour for molecular beam epitaxy of Si on Si(111) during intermittent radiant heating has been investigated using reflection high-energy electron diffraction (RHEED) intensity oscillations. It is found that periodic temperature variations can determine the period and phase of RHEED oscillations.
Wei-Xin Ni, Mats I. Larsson, G. V. Hansson   +2 more
openaire   +2 more sources

Reflection high-energy electron diffraction from an adsorbed monolayer

Physics Letters A, 1979
Abstract A calculation of the intensity distribution due to one-photon inelastic scattering from the Ni(100)− c (2×2)−O system is presented. A comparison is made of the result expected when the adsorbed oxygen is in the “on top”, bridge or fourfold hollow sites.
openaire   +2 more sources

Surface structure analysis using reflection high-energy electron diffraction

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1988
For the reconstructions present during epitaxial growth, the diffraction experiment of choice is reflection high-energy electron diffraction (RHEED). In the RHEED geometry, the momentum transfer normal to the surface is small and can be varied by changing the angle of incidence at constant incident energy.
S. Y. Tong, Philip I. Cohen, T. C. Zhao, D. N. Zhou, K. D. Jamison   +4 more
openaire   +2 more sources