Results 361 to 370 of about 468,062 (374)
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, 1999
The indium incorporation in hexagonal InGaN grown by plasma assisted molecular-beam epitaxy is studied by means of reflection high-energy electron diffraction (RHEED) intensity oscillations.
C. Adelmann +3 more
semanticscholar +1 more source
The indium incorporation in hexagonal InGaN grown by plasma assisted molecular-beam epitaxy is studied by means of reflection high-energy electron diffraction (RHEED) intensity oscillations.
C. Adelmann +3 more
semanticscholar +1 more source
, 2006
We have investigated the adsorption and subsequent desorption of Ga on (0001) GaN using simultaneous line-of-sight quadrupole mass spectrometry (QMS) and reflection high-energy electron diffraction (RHEED).
Jay S. Brown +5 more
semanticscholar +1 more source
We have investigated the adsorption and subsequent desorption of Ga on (0001) GaN using simultaneous line-of-sight quadrupole mass spectrometry (QMS) and reflection high-energy electron diffraction (RHEED).
Jay S. Brown +5 more
semanticscholar +1 more source
, 2006
$\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ quantum dots (QD's) are formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness for the transition from two- (2D) to three-dimensional (3D) growth mode.
H. Z. Song +5 more
semanticscholar +1 more source
$\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ quantum dots (QD's) are formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness for the transition from two- (2D) to three-dimensional (3D) growth mode.
H. Z. Song +5 more
semanticscholar +1 more source
Growth Information Carried by Reflection High-Energy Electron Diffraction
2005Scientific and technological developments have made it possible to grow materials with different properties onto each other, and this way we can build quantum wells, quantum islands, quantum dots (QDs), etc., which leads to the possibility of creating novel devices and applications.
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GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
, 1997GaN and AlxGa1−xN alloys were grown by gas source molecular beam epitaxy using NH3. High quality GaN layers with smooth surfaces being obtained, reflection high-energy electron diffraction (RHEED) can be used to monitor the growth.
N. Grandjean, J. Massies
semanticscholar +1 more source
Iterative method of calculating reflection-high-energy-electron-diffraction intensities
Physical Review B, 1999A method of calculating reflection high-energy electron diffraction intensities is developed within the framework of two-dimensional Bloch-wave approach. In the course of computations only wave-field-related quantities are employed (rather than transfer or scattering matrices). The intensities of reflected beams are calculated iteratively.
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On the investigation of surface structure by reflection high energy electron diffraction (RHEED)
Surface Science, 1973Abstract RHEED (Reflection High Energy Electron Diffraction) has been used to investigate surface structures. A formalism which allows fast, precise determination of the sizes, shapes and relative orientation of the lattices of well-ordered surface structures from the distances between the diffraction lines has been developed.
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