Ozone detection by means of semiconductor gas sensors based on palladium (II) oxide
Thin film semiconductor sensors based on palladium oxide were produced to analyse the concentration of ozone in the air. The palladium oxide films were obtained by means of thermal oxidation of ~ 20-30 nm metal in air at various temperatures.
Stanislav V. Ryabtsev+5 more
doaj +1 more source
Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction [PDF]
We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction.
A Fissel+19 more
core +2 more sources
The Effect of RF-Plasma Power on the Growth of III-Nitride Materials [PDF]
In this study, n-InGaN nanorods were grown directly on p-type Si (111) substrates by plasma- assisted molecular beam epitaxy (PA-MBE). The crystal structure is investigated using the reflection of high-energy electron diffraction patterns.
Samir Mustafa Hamad+3 more
doaj +1 more source
Emerging beam resonances in atom diffraction from a reflection grating [PDF]
We report on the observation of emerging beam resonances, well known as Rayleigh-Wood anomalies and threshold resonances in photon and electron diffraction, respectively, in an atom-optical diffraction experiment. Diffraction of He atom beams reflected from a blazed ruled grating at grazing incidence has been investigated. The total reflectivity of the
arxiv +1 more source
Rocksalt MgS solar blind ultra-violet detectors
Studies using in-situ Auger electron spectroscopy and reflection high energy electron diffraction, and ex-situ high resolution X-ray diffraction and electron backscatter diffraction reveal that a MgS thin film grown directly on a GaAs (100) substrate by ...
Ying-Hoi Lai+6 more
doaj +1 more source
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by ...
Zhaoquan Zeng+13 more
doaj +1 more source
In situ reflection electron energy loss spectroscopy measurements of low temperature surface cleaning for Si molecular beam epitaxy [PDF]
In situ analysis of hydrocarbon desorption from hydrogen terminated Si(100) surfaces was performed in a silicon molecular beam epitaxy system, using reflection electron energy loss spectroscopy, in conjunction with conventional reflection high energy ...
Ahn, Channing C.+4 more
core +1 more source
Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy
In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy.
Sathiabama Thiru+6 more
doaj +1 more source
Investigation of the orientation relationship between nano-sized G-phase precipitates and austenite with scanning nano-beam electron diffraction using a pixelated detector [PDF]
Scanning nano-beam electron diffraction with a pixelated detector was employed to investigate the orientation relationship of nanometer sized, irradiation induced G-phase (M$_6$Ni$_{16}$Si$_{7}$) precipitates in an austenite matrix. Using this detector, the faint diffraction spots originating from the small G-phase particles could be resolved ...
arxiv +1 more source
Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy [PDF]
Thick (∼3 μm) films of InxGa1−xAs grown on GaAs(100) substrates, across the whole composition range, have been examined by transmission electron microscopy and double‐crystal x‐ray diffraction.
Westwood, David I.+4 more
core +1 more source