Results 41 to 50 of about 192,004 (363)

Variation of blocking temperatures for exchange biased CoO/Co/Ge(100) films

open access: yesAIP Advances, 2016
Variations of the blocking temperature and related structures for CoO/Co/Ge(100) films are investigated by employing reflection high energy electron diffraction, Auger electron spectroscopy, and surface magneto-optic Kerr effect measurements.
Cheng-Hsun-Tony Chang   +3 more
doaj   +1 more source

In-situ Investigation of the Early Stage of TiO2 epitaxy on (001) SrTiO3 [PDF]

open access: yes, 2011
We report on a systematic study of the growth of epitaxial TiO2 films deposited by pulsed laser deposition on Ti-terminated (001) SrTiO3 single crystals. By using in-situ reflection high energy electron diffraction, low energy electron diffraction, x-ray
Di Capua, R.   +6 more
core   +2 more sources

β-Ga2O3 on Si (001) grown by plasma-assisted MBE with γ-Al2O3 (111) buffer layer: Structural characterization

open access: yesAIP Advances, 2021
β-Ga2O3 was deposited in thin film form by plasma-assisted molecular beam epitaxy at 670 °C and 630 °C onto a γ-Al2O3 (111) buffer layer grown at 840 °C by e-beam evaporation on a clean Si (001) surface.
Tobias Hadamek   +5 more
doaj   +1 more source

Dynamic Precipitation during High‐Pressure Torsion of a Magnesium–Manganese Alloy

open access: yesAdvanced Engineering Materials, EarlyView.
An ultrafine‐grained alloy is produced by high‐pressure torsion of solutionized Mg–1.35 wt% Mn. Precipitation of nanometer‐scale Mn particles during deformation provides pinning sites. This prevents the formation of a bimodal grain structure and results in a finer grain size than for pure Mg.
Julian M. Rosalie, Anton Hohenwarter
wiley   +1 more source

Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb

open access: yesAIP Advances, 2022
We study the growth and properties of the quaternary-alloy ferromagnetic semiconductor (In0.94−x,Gax,Fe0.06)Sb (x = 5%–30%; the Fe concentration is fixed at 6%) grown by low-temperature molecular beam epitaxy.
Tomoki Hotta   +5 more
doaj   +1 more source

Trace Nickel Activated Biphasic Core‐CuOii/Shell‐CuOi Secondary Microspheres Enable Room Temperature Parts‐Per‐Trillion‐Level NO2 Detection

open access: yesAdvanced Engineering Materials, EarlyView.
An idea of designing novel sensors is proposed by creating appropriate Schottky barriers and vacancies between isomorphous Core‐CuOii/ Shell‐CuOi secondary microspheres and enhancing catalytic and spill‐over effects, and electronegativity via spontaneous biphasic separation, self‐assembly, and trace‐Ni‐doping.
Bala Ismail Adamu   +8 more
wiley   +1 more source

Coherent control of injection currents in high-quality films of Bi2Se3 [PDF]

open access: yes, 2015
Films of the topological insulator Bi2Se3 are grown by molecular beam epitaxy with in-situ reflection high-energy electron diffraction. The films are shown to be high-quality by X-ray reflectivity and diffraction and atomic-force microscopy.
Babakiray, S.   +7 more
core   +3 more sources

Challenges during Flash Lamp Annealing of Aerosol‐Deposited Barium Titanate Films

open access: yesAdvanced Engineering Materials, EarlyView.
Aerosol deposition is used to rapidly deposit barium titanate films with thicknesses ranging from 2 to 16 μm at room temperature, eliminating the need for further densification. However, to recover the electromechanical properties, annealing is required, which limits the usage of temperature‐sensitive substrates.
Michel Kuhfuß   +7 more
wiley   +1 more source

Decelerated lattice excitation and absence of bulk phonon modes at surfaces: Ultra-fast electron diffraction from Bi(111) surface upon fs-laser excitation

open access: yesStructural Dynamics, 2019
Ultrafast reflection high-energy electron diffraction is employed to follow the lattice excitation of a Bi(111) surface upon irradiation with a femtosecond laser pulse. The thermal motion of the atoms is analyzed through the Debye–Waller effect.
V. Tinnemann   +10 more
doaj   +1 more source

Enhanced Oxidation and Thermal Shock Resistance of N‐type Mg2Si0.89(Sn0.1,Sb0.01) Thermoelectric Material via Cr0.9Si0.1 Coating

open access: yesAdvanced Engineering Materials, EarlyView.
Cr0.9Si0.1 protective coatings are developed to enhance the thermal‐shock and oxidation resistance of Mg2Si0.89(Sn0.1,Sb0.01) thermoelectric (TE) materials. The coating forms a dense and adherent barrier that suppresses oxygen diffusion and mitigates mechanical degradation during cyclic oxidation, demonstrating its potential to improve the long‐term ...
Mikdat Gurtaran   +3 more
wiley   +1 more source

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