Results 51 to 60 of about 911 (236)

Full‐Field Damage Monitoring in Architected Lattices Using In situ Electrical Impedance Tomography

Advanced Functional Materials, EarlyView.
In situ electrical impedance tomography (EIT) turns 3D‐printed, CNT‐infused architected lattices into full‐field damage‐imaging systems. Tunable Voronoi‐based geometries act as active sensing architectures, enabling conductivity maps to detect early‐stage damage and localise sequential ligament fracture before catastrophic failure.
Akash Deep, Andrea Samore, Alistair McEwan, Andrew McBride, Shanmugam Kumar   +4 more
wiley   +1 more source

Analog Classification of Human Hand Gestures Exploiting Dendritic Integration With an Organic Artificial Soma

Advanced Functional Materials, EarlyView.
An organic neuromorphic architecture for the classification of human motor behavior is presented and validated. It performs somatic integration by linearly combining the activity from three muscles. An investigation of synaptic weights is presented and discussed in relationship with the classification performance.
Ilenia Sergi, Federico Rondelli, Francesco Torricelli, Federica Velluto, Anna De Salvo, Michele Di Lauro, Luciano Fadiga, Fabio Biscarini   +7 more
wiley   +1 more source

Multidimensional‐Encoded High‐Fidelity Spectrometers With a Floating‐Base Bipolar Junction

Advanced Functional Materials, EarlyView.
A floating‐base bipolar junction photodetector enables multidimensional spectral encoding through synergistic gate‐ and drain‐bias modulation of interfacial barrier matching. The resulting complementary spectral responses form a diverse, weakly correlated response matrix, enabling robust and high‐fidelity spectral reconstruction even at sub‐nanoampere ...
Sang‐Hyeon Lee, Junho Min, Yonas Tsegaye Megra, Min‐Hye Jeong, Hwi Je Woo, Jaewon Han, Junheon Ha, Gyunghyun Jang, Young Jae Song, Hyun‐Soo Ra, Hoon Hahn Yoon, Jong‐Soo Lee   +11 more
wiley   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

High-Performance Dual-Wavelength All-Optical Reflective Semiconductor Optical Amplifier Utilizing Solution-Processed Quantum Dots

Journal of Optoelectronical Nanostructures
This study introduces a dual-wavelength all-optical quantum dot reflective semiconductor optical amplifier (QD-RSOA), emphasizing its advanced performance and versatility in modern optical communication systems.
Hamed Ghatei Khiabani Azar, Samiye Matloub, Hamed Baghban   +2 more
doaj  

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source

Ultra-low-reflectivity semiconductor optical amplifiers without antireflection coatings

Electronics Letters, 1990
High-performance, tilted stripe ridge waveguide semiconductor optical amplifiers which require no antireflection coating to achieve reflectivities of less than −40 dB are demonstrated. This very low reflectivity is found to be both largely independent of polarisation and wavelength, and also easily reproducible from wafer to wafer.
W. Rideout, R. Holmstrom, J. Lacourse, E. Meland, W. Powazinik   +4 more
openaire   +1 more source