Results 51 to 60 of about 2,950,365 (215)

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Multicore-Fiber-Enabled WSDM Optical Access Network With Centralized Carrier Delivery and RSOA-Based Adaptive Modulation

IEEE Photonics Journal, 2015
We proposed and experimentally demonstrated a wavelength-space division multiplexing (WSDM) optical access network architecture with centralized optical carrier delivery utilizing multicore fibers (MCFs) and adaptive modulation based on reflective ...
Zhenhua Feng, Borui Li, Ming Tang, Lin Gan, Ruoxu Wang, Rui Lin, Zhilin Xu, Songnian Fu, Lei Deng, Weijun Tong, Shengya Long, Lei Zhang, Hongyan Zhou, Rui Zhang, Shuang Liu, Perry Ping Shum   +15 more
doaj   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing

Advanced Functional Materials, EarlyView.
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon, Je‐Jun Lee, Somin Yun, Sangin Hahn, Chanhyeok Kim, Jinsoo Park, Jung Pyo Hong, Seong‐Jun Han, Jung Woo Kim, Jeong Hwan Lee, Subin Jeon, Youngmin Kim, Gunuk Wang, Hanul Min, Do Kyung Hwang   +14 more
wiley   +1 more source

Sub‐1 ms Optoelectronic Synapse Based on {ZnCdO/ZnO} Multilayer Structure for High‐Speed Neuromorphic Vision Systems

Advanced Functional Materials, EarlyView.
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski, Eunika Zielony, Adrian Kaim, Ewa Przeździecka   +3 more
wiley   +1 more source

Reflective Semiconductor Optical Amplifier Chip with Low Ripple for C-Band External Cavity Narrow-Linewidth Laser

Photonics
The main characteristic of a reflective semiconductor optical amplifier chip (RSOA) is that it does not generate optical resonance under electric pumping and maintains the operation state of spontaneous emission.
Shaojie Li, Haiyang Yu, Haotian Bao, Menghan Ren, Jianguo Liu, Zeqiu Liu, Yulian Cao   +6 more
doaj   +1 more source

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella, Andrea Sessa, Yi‐Chen Tsai, Xuzhao Liu, Abdul Mannan, George Greaves, Yahya Saboon, Ben Spencer, Antonio Di Bartolomeo, Cinzia Casiraghi, Jessica Boland, Alessandro Grillo   +11 more
wiley   +1 more source

Circularly Polarized Electroluminescence and Spin‐Polarized Carrier Transport in Chiral‐Doped Polymer Films

Advanced Functional Materials, EarlyView.
Chiral dopants induce supramolecular chirality in an achiral polymer (PFO), generating spin‐polarized carriers via the chiral‐induced spin selectivity (CISS) and suggesting a possible contribution of Spin‐polarized carrier transport to circularly polarized electroluminescence (CPEL).
Kazuyuki Asahi, Masashi Hasegawa, Yuuya Nagata, Tamaki Nakano, Hiroyuki Nishikawa   +4 more
wiley   +1 more source

Nitride MXenes Beyond Carbides: Bridging the Gap Between Computational Prediction and Experimental Realization

Advanced Functional Materials, EarlyView.
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley   +1 more source

Influence of residual facet reflectivity on nonlinearities in semiconductor optical amplifiers

Electronics Letters, 1991
A dynamic model for multichannel amplification by semiconductor optical amplifiers is used to predict the influence of the residual facet reflectivities on intermodulation distortion.
T. Durhuus, B. Mikkelsen, K.E. Stubkjaer
openaire   +1 more source