Results 31 to 40 of about 883 (240)

Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser

IEEE Photonics Journal, 2016
We describe the first demonstration and characterization of an optically integrated InP–Si $_3$N$_4$ hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a Si$_3$N $_4$ based feedback ...
Youwen Fan, Jorn P. Epping, Ruud M. Oldenbeuving, Chris G. H. Roeloffzen, Marcel Hoekman, Ronald Dekker, Rene G. Heideman, Peter J. M. van der Slot, Klaus-J. Boller   +8 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Self-Seeded RSOA-Fiber Cavity Lasers vs. ASE Spectrum-Sliced or Externally Seeded Transmitters—A Comparative Study

Applied Sciences, 2015
Reflective semiconductor optical amplifier fiber cavity lasers (RSOA-FCLs) are appealing, colorless, self-seeded, self-tuning and cost-efficient upstream transmitters. They are of interest for wavelength division multiplexed passive optical networks (WDM-
Simon A. Gebrewold, Romain Bonjour, Sophie Barbet, Anaelle Maho, Romain Brenot, Philippe Chanclou, Marco Brunero, Lucia Marazzi, Paola Parolari, Angelina Totovic, Dejan Gvozdic, David Hillerkuss, Christian Hafner, Juerg Leuthold   +13 more
doaj   +1 more source

All-optical power equalization based on a two-section reflective semiconductor optical amplifier

Optics Express, 2013
A simple all-optical power equalization scheme based on a single two-section reflective semiconductor optical amplifier (RSOA) is presented. Double optical path and non-uniform injection current density in the two sections easily saturate the RSOA and suppress pattern effect, thereby significantly reducing packet-to-packet power fluctuation while ...
Lirong, Huang, Wei, Hong, Guiying, Jiang
openaire   +2 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Intra-Cavity Chromatic Dispersion Impacts on 10-Gb/s Optical OFDM Transmissions Over 25-km Dual-RSOA-Based Self-Seeded PON Systems

IEEE Photonics Journal, 2015
Owing to the lack of strong physical mechanisms capable of elaborately balancing a large number of longitudinal modes created in a self-seeded passive optical network (PON), the resulting coherent-like optical signals are vulnerable to frequency ...
M. L. Deng, B. Y. Cao, R. P. Giddings, Y. X. Dong, N. Jiang, D. Nesset, K. Qiu, J. M. Tang   +7 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Facet reflectivity of a spot-size-converter integrated semiconductor optical amplifier [PDF]

IEEE Journal of Quantum Electronics, 2002
Traveling-wave type semiconductor optical amplifiers (SOAs) integrated with a spot-size-converter (SSC) are extensively studied for improvement of coupling efficiency with single-mode fibers and for cost reduction in packaging. In this paper, the structural dependence of the SSC on effective facet reflectivity R/sub eff/ is investigated theoretically ...
J. Shim, J. Kim, D. Jang, Y. Eo, S. Arai
openaire   +1 more source

Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd3As2

Advanced Functional Materials, EarlyView.
Dilute magnetic doping of topological semimetals offers a pathway to tune the topological phase via time reversal symmetry breaking. This is achieved by alloying the Dirac semimetal Cd3As2 with Mn via molecular beam epitaxy. Magnetotransport measurements provide preliminary evidence of changes to the electronic structure consistent with the emergence ...
Anthony D. Rice, Ian Leahy, Herve Ness, Andrew G. Norman, Karen N. Heinselman, Chun‐Sheng Jiang, David Graf, Alexey Suslov, Stephan Lany, Mark Van Schilfgaarde, Kirstin Alberi   +10 more
wiley   +1 more source