Results 171 to 180 of about 113,538 (326)
Advanced Materials Interfaces, EarlyView.Freestanding TiN–Au vertically aligned nanocomposite (VAN) thin films are fabricated by dissolving a Sr3Al2O6 sacrificial layer and releasing from the substrates. Freestanding VAN films combine flexibility with strong plasmonic resonance properties, providing a versatile platform for future applications in flexible photonics, plasmonics, and integrated
Jialong Huang +7 more
wiley +1 more source
How to Manufacture Photonic Metamaterials
Advanced Materials Technologies, EarlyView.Metamaterials boast applications such as invisibility and “hyperlenses” with resolution beyond the diffraction limit, but these applications haven’t been exploited in earnest and the market for them hasn’t grown much likely because facile and economical methods for fabricating them without defect has not emerged.
Apurba Paul, Gregory Timp
wiley +1 more source
Silicon‐Integrated Next‐Generation Plasmonic Devices for Energy‐Efficient Semiconductor Applications
Advanced Materials Technologies, EarlyView.Silicon (Si)‐integrated plasmonics offer a pathway to next‐generation, energy‐efficient semiconductor applications. This review highlights advances using complementary metal–oxide–semiconductor (CMOS)‐compatible materials like transparent conductive oxides and novel architectures, particularly coupled hybrid plasmonic waveguides (CHPWs).
Nasir Alfaraj, Amr S. Helmy
wiley +1 more source
Advanced Materials Technologies, EarlyView.New theoretical model for vertical contact and separation mode triboelectric nanogenerator is proposed. Detailed derivation process and results are discussed. Numerical solutions and parametric studies are presented. Calculated results are validated by experimental outcomes.
Seokjin Kim +2 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.This study investigates the impact of the oxidation state of the WOX interfacial layer (IL) on its conductance and the associated voltage drop, aiming to mitigate fatigue and imprint in HZO‐based devices. As a result, through scaling the ferroelectric layer and engineering ILs, reduced wake‐up, functional operation exceeding 1011 cycles, and data ...
Mostafa Habibi +9 more
wiley +1 more source
The effects of magnetic fields exposure on relative permittivity of saline solutions measured by a high resolution SPR system. [PDF]
Sci Rep, 2016 Jiang L +7 more
europepmc +1 more source
Autodrop‐Enabled Aqueous Deposition of BiVO4–FePO4 Photoanodes for Stable Water Splitting
Advanced Materials Technologies, EarlyView.This study presents the Autodrop method, an automated SILAR process, for fabricating BiVO4−FePO4 photoanodes. The study focuses on the effect of the preparation parameters on the properties of BiVO4. The method improves film uniformity and preparation time. Photoanodes are optimized for OER activity with the addition of FePO4, achieving higher and more
Roberto Altieri +6 more
wiley +1 more source
One Dimensional Metal Oxide Semiconductor Nanotransistors
Advanced Materials Technologies, EarlyView.This review assesses one dimensional metal oxide NW‐FETs as promising alternatives to conventional transistors. It explores how advances in architecture, material composition, and fabrication processes expand device capabilities. Emphasis is placed on novel gate configurations, different metal oxide nanowires, and post‐treatment methods, which ...
Mariana D. Cortinhal +2 more
wiley +1 more source
Comparison of models for the relative static permittivity with the e-CPA equation of state
, 2022 Martin Due Olsen +3 more
openalex +1 more source
Advanced Materials Technologies, EarlyView.Amorphous boron nitride (aBN) crystallizes into turbostratic BN as the thickness increases, leading to a higher dielectric constant (k‐value), increased leakage current density, and reduced breakdown field. Incorporating SiOx layers effectively prevents this crystallization.
Chih‐Pin Hsu +7 more
wiley +1 more source