Results 101 to 110 of about 6,159 (262)

Large‐Scale Determination of Frontier Orbital Energies of Disordered Small‐Molecule Organic Semiconductors Using Exciplex Emission Spectra

Advanced Materials, EarlyView.
ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald, Hiroki Tomita, Giacomo Cotelli, Louka L. Brüll, Nanno G. de Rooij, Lucas R.L. Norg, Milo Clément, Reinder Coehoorn   +7 more
wiley   +1 more source

Weakly‐Coordinating Non‐Fluorinated Diluents for Local High‐Concentration Electrolytes in Advanced Lithium Metal Batteries

Advanced Materials, EarlyView.
This perspective critically evaluates non‐fluorinated diluents in local high‐concentration electrolytes, categorizing their solvation behavior, interfacial mechanisms, and sustainability potential to guide future electrolyte design for lithium metal batteries.
Yin Cui, Xinrui Li, Nan Jiang, Xinyan Huang, E. Lora da Silva, Ruo Zhao, Tao Yang, Qingxia Liu, Xidong Lin   +8 more
wiley   +1 more source

Tailoring Phonon‐Driven Responses in α‐MoO3 through Isotopic Enrichment

Advanced Materials, EarlyView.
ABSTRACT The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material, α‐MoO3, an orthorhombic crystal boasting three distinct phonon dispersions, provides three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the ...
Thiago S. Arnaud, Ryan W. Spangler, Johnathan D. Georgaras, Jonah B. Haber, Daniel Hirt, Maximilian Obst, Gonzalo Álvarez‐Pérez, Mackey Long III, Felix G. Kaps, Jakob Wetzel, Courtney Ragle, John E. Buchner, Youngji Kim, Aditha S. Senarath, Richarda Niemann, Mingze He, Giulia Carini, Unai Arregui‐Leon, Akash C. Behera, Ramachandra Bangari, Nihar Sahoo, Niels C. Brumby, J. Michael Klopf, Martin Wolf, Lukas M. Eng, Susanne C. Kehr, Thomas G. Folland, Alexander Paarmann, Patrick E. Hopkins, Felipe Jornada, Jon‐Paul Maria, Joshua D. Caldwell   +31 more
wiley   +1 more source

A Terahertz Permittivity Sensor Based on an SSPPs–SRR Coupled Structure

Photonics
Accurate permittivity characterization at terahertz frequencies is important for material analysis and device design, yet it remains challenging for small-volume samples and compact test structures.
Ting Zeng, Chunyang Bi, Zhichao Bi, Jun Zhou, Sen Gong   +4 more
doaj   +1 more source

Bias‐Field Free Single‐Frequency CW‐ODMR of Nitrogen‐Vacancy Centers in Diamond for the Detection of Transient Electrical Signals

Advanced Materials Interfaces, EarlyView.
Simplified quantum sensing technique for the detection of short electrical signals occurring in neuronal signaling or bioinspired technologies. We demonstrate a single frequency continuous‐wave optically detected magnetic resonance (CW‐ODMR) approach to sense signals that can be as short as 0.2 ms.
João Paulo Silva, Orlando D. Cunha, Pedro Magalhães, Filipe Camarneiro, Jana B. Nieder   +4 more
wiley   +1 more source

Validation of a Complex Permittivity Meter for Porous Media Operating Between 1 and 20 MHz

, 2011
International audienceThis paper describes the procedure to qualify an admittance meter as a permittivity meter and a conductivity meter sigma(sensor) through validation with liquids over a range of relative permittivity epsilon(r) values from 1 to 80 ...
Frangi, Jean-Pierre, Conejo, Elian, Bexi, Idris, Chavanne, Xavier   +3 more
core   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source

A microwave interferometer system for humidity measurement

, 1998
A microwave interferometer system for humidity measurement has been developed. The system is based on the sensitivity of the air permittivity to the water vapor content and offers a faster response and a better air pollution insensitivity with respect to
A. Ferrero, Parvis, Marco, Ferrero, Andrea Pierenrico, Carullo, Alessio, A. Carullo, M. Parvis   +5 more
core   +1 more source

High‐Sensitivity Terahertz Gas Sensing Enabled by Undercut Metal‐Dielectric‐Metal Metamaterial

Advanced Materials Interfaces, EarlyView.
A terahertz (THz) metamaterial gas sensor is demonstrated using a metal–dielectric–metal (MDM) absorber with an undercut dielectric layer, which enlarges the gas‐replaced volume and strengthens refractive‐index perturbation of the resonant mode. A reflection dip at 0.766 THz is observed, and acetone–nitrogen tests yield concentration‐dependent shifts ...
Naoki Inomata, Yuki Sakai, Yoshiaki Kanamori   +2 more
wiley   +1 more source