Results 151 to 160 of about 261,209 (317)

Relaxation Response–Based Yoga Improves Functioning in Young Children with Autism: A Pilot Study [PDF]

open access: green, 2011
Lucy E. Rosenblatt   +10 more
openalex   +1 more source

Over 18% Efficiency from Halogen‐Free Solvent‐Processed Polymer Solar Cells Enabled by Asymmetric Small Molecule Acceptors with Fluoro‐Thienyl Extended Terminal

open access: yesAdvanced Functional Materials, EarlyView.
An asymmetric non‐fullerene acceptor BTP‐FT is developed by extending the end group of Y6‐BO with thiophene. The conformation of the molecule is determined by the noncovalent F···S interaction as demonstrated by 2D NMR and simulations. An efficiency of 18.39% is achieved in the resulting ternary solar cells processed from toluene.
Jingnan Wu   +14 more
wiley   +1 more source

Photoswitchable Conductive Metal–Organic Frameworks

open access: yesAdvanced Functional Materials, EarlyView.
A conductive material where the conductivity can be modulated remotely by irradiation with light is presented. It is based on films of conductive metal–organic framework type Cu3(HHTP)2 with embedded photochromic molecules such as azobenzene, diarylethene, spiropyran, and hexaarylbiimidazole in the pores.
Yidong Liu   +5 more
wiley   +1 more source

Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour   +11 more
wiley   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

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