Results 171 to 180 of about 11,684,150 (395)
Relaxation and overlap-probability function in the spherical and mean-spherical models [PDF]
Nicola Fusco, Marco Zannetti
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In this work, a new tetracene derivative, 5,11‐di(thiophen‐2‐yl)tetracene (2T‐Tc) is introduced, exhibiting enhanced physical and chemical stability, and retaining favorable singlet fission kinetics with near unity triplet pair yield in thin films.
Jieun Lee+11 more
wiley +1 more source
Radial distribution function and structural relaxation in amorphous solids
David J. Srolovitz, T. Egami, V. Vítek
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Photoswitchable Conductive Metal–Organic Frameworks
A conductive material where the conductivity can be modulated remotely by irradiation with light is presented. It is based on films of conductive metal–organic framework type Cu3(HHTP)2 with embedded photochromic molecules such as azobenzene, diarylethene, spiropyran, and hexaarylbiimidazole in the pores.
Yidong Liu+5 more
wiley +1 more source
Susceptibility functions for slow relaxation processes in supercooled liquids and the search for universal relaxation patterns [PDF]
Th. Blochowicz+3 more
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Hamilton's equations for relaxation function
The relaxation function is the cornerstone to perform calculations in weakly driven processes. Properties that such a function should obey are already established, but the difficulty in its calculation is still an issue to be overcome. In this work, I proposed a new method to determine such a function for thermally isolated systems, based on a Hamilton'
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This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour+11 more
wiley +1 more source
Determination of the relaxation time distribution function from dielectric losses [PDF]
S. A. Ktitorov
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Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan+11 more
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