Results 281 to 290 of about 33,110 (327)

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Harnessing local inhomogeneity for enhanced dielectric energy storage. [PDF]

open access: yesNat Commun
Liu Y   +6 more
europepmc   +1 more source

Improving the Energy Storage Performance in Bi0.5Na0.5TiO3-Based Ceramics by Combining Relaxor and Antiferroelectric Properties. [PDF]

open access: yesMaterials (Basel)
Pattipaka S   +8 more
europepmc   +1 more source

Design of polymorphic heterogeneous shell in relaxor antiferroelectrics for ultrahigh capacitive energy storage. [PDF]

open access: yesNat Commun
Yu H   +10 more
europepmc   +1 more source

BaTiO<sub>3</sub>-Based Electrocaloric Materials-Recent Progresses and Perspective. [PDF]

open access: yesMaterials (Basel)
Tang Y   +8 more
europepmc   +1 more source

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