Results 141 to 150 of about 4,429 (294)

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee   +9 more
wiley   +1 more source

A novel lead‐free relaxor with endotaxial nanostructures for capacitive energy storage

open access: yesSusMat
Dielectric capacitors with a fast charging/discharging rate, high power density, and long‐term stability are essential components in modern electrical devices.
Xiaoyan Dong   +5 more
doaj   +1 more source

Enhanced Energy Storage Performance in Na0.5Bi0.5TiO3-Based Relaxor Ferroelectric Ceramics via Compositional Tailoring. [PDF]

open access: yesMaterials (Basel), 2022
Jiang Y   +13 more
europepmc   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

open access: yesAdvanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen   +8 more
wiley   +1 more source

Stress‐to‐Light Conversion in an Earth‐Abundant Oxide Semiconductor

open access: yesAdvanced Science, EarlyView.
Stress‐to‐light conversion in solids represents a unique photonic functionality, yet it has never been realized in a chemically simple and sustainable material. Here, we show that sustainable semiconductor ZnO exhibits strong near‐infrared (NIR) luminescence under elastic stress when defect‐engineered to stabilize the p‐type state.
Tomoki Uchiyama   +7 more
wiley   +1 more source

Large Electrocaloric Effect in Relaxor Ferroelectric and Antiferroelectric Lanthanum Doped Lead Zirconate Titanate Ceramics

open access: yes, 2017
Both relaxor ferroelectric and antiferroelectric materials can individually demonstrate large electrocaloric effects (ECE). However, in order to further enhance the ECE it is crucial to find a material system, which can exhibit simultaneously both ...
Sheng-Guo Lu   +6 more
core   +1 more source

Asymmetric Electrostrain/Electrobending in Piezoelectric Ceramics: Role of Defect Dipoles or Oxygen Vacancies

open access: yesAdvanced Science, EarlyView.
Defect‐configurational origins of the asymmetric apparent electrostrain are revealed in different piezoelectric ceramics via atomic‐scale visualization of defect configurations. Migration of oxygen vacancies leads to the electrobending effect in N2‐sintered BaTiO3, while defect dipoles in Ba0.99TiO2.99 generate true asymmetric electrostrain without ...
Jie Wang   +7 more
wiley   +1 more source

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