Results 191 to 200 of about 4,429 (294)

Large Room-Temperature Electrocaloric Effect in Lead-Free Relaxor Ferroelectric Ceramics with Wide Operation Temperature Range. [PDF]

Materials (Basel)
Zhao X, Zhou Z, Liang B, Lu S.
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Discovery of an Ideal HgO12 Icosahedron and Magnetodielectric Coupling in HgCu3Ti4O12

Advanced Electronic Materials, EarlyView.
HgCu3Ti4O12, an A‐site‐ordered quadruple perovskite with a perfectly regular HgO12 coordination, has been synthesized for the first time using high‐pressure methods. The material shows antiferromagnetic ordering at 31 K together with an intrinsic dielectric anomaly, implying possible magnetodielectric coupling.
Haoyu Zheng, Jianfa Zhao, Jun Deng, Lei Duan, Xudong Shen, Zhiwei Hu, Luchuan Shi, Yuling Dai, Xiaoming Chen, Xubin Ye, Jun Zhang, Wenmin Li, Zheng Deng, Xiancheng Wang, Chang‐Yang Kuo, Chien‐Te Chen, Youwen Long, Runze Yu, Changjiang Xiao, Changqing Jin   +19 more
wiley   +1 more source

Electrically and mechanically driven rotation of polar spirals in a relaxor ferroelectric polymer. [PDF]

Nat Commun
Guo M, Xu E, Huang H, Guo C, Chen H, Chen S, He S, Zhou L, Ma J, Shen Z, Xu B, Yi D, Gao P, Nan CW, Mathur ND, Shen Y.   +15 more
europepmc   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Ferroelectric and Relaxor-Ferroelectric Phases Coexisting Boosts Energy Storage Performance in (Bi_0.5Na_0.5)TiO₃-Based Ceramics. [PDF]

Molecules
Li Y, Lu G, Zhao Y, Zhao R, Zhao J, Hao J, Bai W, Li P, Li W.   +8 more
europepmc   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Local atomic order and hierarchical polar nanoregions in a classical relaxor ferroelectric. [PDF]

Nat Commun, 2019
Eremenko M, Krayzman V, Bosak A, Playford HY, Chapman KW, Woicik JC, Ravel B, Levin I.   +7 more
europepmc   +1 more source

Accelerating Discovery of Organic Molecular Crystals via Materials Informatics and Autonomous Experiments

Advanced Intelligent Discovery, EarlyView.
Materials informatics and autonomous experimentation are transforming the discovery of organic molecular crystals. This review presents an integrated molecule–crystal–function–optimization workflow combining machine learning, crystal structure prediction, and Bayesian optimization with robotic platforms.
Takuya Taniguchi, Kazuki Ishizaki, Ryo Fukasawa   +2 more
wiley   +1 more source

Electric field effect on short-range polar order in a relaxor ferroelectric system. [PDF]

Phys Rev B, 2019
Xu Z, Li F, Zhang S, Stock C, Luo J, Gehring PM, Xu G.   +6 more
europepmc   +1 more source