Results 221 to 230 of about 292,067 (328)

Large High-Temperature Piezoelectric Response of Lead-free BiFeO₃-BaTiO₃ Originating from Relaxor Disorder. [PDF]

Small
Iacomini A, Roknić J, Sidibe I, Scavini M, Otoničar M, Uršič H, Rojac T.   +6 more
europepmc   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li, Zhiqiang Liao, Risa Kataoka, Md Sarker Shamim, Takeshi Kijima, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki   +7 more
wiley   +1 more source

Room-Temperature Large and Reversible Modulation of Photoluminescence by in Situ Electric Field in Ergodic Relaxor Ferroelectrics.

ACS Applied Materials and Interfaces, 2017
Hailing Sun, Xiao Wu, Deng Peng, K. Kwok
semanticscholar   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert, Ali Barooni, Benjamin Gregory, Paul Malinowski, Anirudh Tenneti, Sonia Hasko, Brenan Palazzolo, Jeffrey W Hodgson, Brendan Faeth, Patrick M. Woodward, Kyle M. Shen, Andrej Singer, Maryam Ghazisaeidi, Salva Salmani‐Rezaie, Darrell G. Schlom, Kaveh Ahadi   +15 more
wiley   +1 more source

Enhanced energy-storage in lead-free multilayer capacitors via entropy-assisted polymorphic domain engineering. [PDF]

Nat Commun
Li J, Zhang Y, Liu Z, Wei L, Peng H, Liu M, Yan S, Zhao K, Zeng H, Yang Z, Wang G.   +10 more
europepmc   +1 more source

Ultrafast Terahertz Field Control of the Emergent Magnetic and Electronic Interactions at Oxide Interfaces

Advanced Materials, Volume 38, Issue 8, 6 February 2026.
Intense single‐cycle THz electric‐field pulses enable ultrafast control of emergent electronic and magnetic states at LaNiO3/CaMnO3 interfaces. Combined X‐ray and optical probes reveal sub‐picosecond demagnetization driven by spin‐polarized currents and slower magnetoelastic dynamics linked to spin–lattice coupling.
Abigail M. Derrico, Martina Basini, Vivek Unikandanunni, Jay R. Paudel, Mikhail Kareev, Michael Terilli, Tsung‐Chi Wu, Afnan Alostaz, Christoph Klewe, Padraic Shafer, Andrei Gloskovskii, Christoph Schlueter, Claus M. Schneider, Jak Chakhalian, Stefano Bonetti, Alexander X. Gray   +15 more
wiley   +1 more source

Design of hierarchical-heterostructure antiferroelectrics for ultrahigh capacitive energy storage. [PDF]

Nat Commun
Chen L, Hu T, Qi H, Yu H, Fu Z, Zhang S, Chen J.   +6 more
europepmc   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Impact of Ce Doping on the Relaxor Behavior and Electrical Properties of Sr_0.4Ba_0.6Nb₂O₆ Ferroelectric Ceramics. [PDF]

Materials (Basel)
Zhao Y, Mao P, Kang R, Li Z, Kang F.
europepmc   +1 more source

Tunneling‐Controlled Fusion of Short‐ and Long‐Term Memory in SiO2/HfO2‐Based Neuromorphic Device for Time‐Series Prediction

Advanced Science, Volume 13, Issue 7, 3 February 2026.
Based on trap‐assisted tunneling, the devices can fuse STM/LTM, where the low switching energy of 1 pJ and stable low‐power retention (0.2 % loss ratio and 3.05 × 10−11 W) is achieved. Training in a long short‐term memory network it allows to analysis time‐series data and then makes precise long‐term predictions with an error ratio of 4.465 ...
Chengdong Yang, Lihua Xu, Linlin Su, Yue Wu   +3 more
wiley   +1 more source