Results 61 to 70 of about 5,651 (284)

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

Advanced Functional Materials, EarlyView.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne, Denis Alikin, Milica Vasiljevic, Victor B. Tinti, Javier Zamudio‐García, Leonardo Soares de Oliveira, Megan Landberg, Dimitrios Koukoulis, Huaiyu Chen, Jesper Wallentin, David Marrero‐López, Astri Bjørnetun Haugen, Sizhao Huang, Dennis Christensen, Nini Pryds, Alexander Tselev, Andrei Kholkin, Vincenzo Esposito   +17 more
wiley   +1 more source

Electrocaloric effects in ferroelectrics and multiferroics from first principles

Journal of Materiomics
The electrocaloric (EC) effect characterizes the change in temperature or entropy of a material under the application of an external electric field. Ferroelectric and multiferroic materials have attracted considerable interest due to their potential for ...
Zhijun Jiang, Xueqing Wan, Bin Xu, Jorge Íñiguez-González, Laurent Bellaiche   +4 more
doaj   +1 more source

Evidence for existence of Functional Monoclinic Phase in Sodium Niobate based Solid Solution by Powder Neutron Diffraction

, 2018
We have carried out systematic temperature-dependent neutron diffraction measurements in conjunction with dielectric spectroscopy from 6 to 300 K for sodium niobate based compounds (1-x) NaNbO3 -xBaTiO3 (NNBTx).
Chaplot, S. L., Jauhari, Mrinal, Krishna, P. S. R., Mishra, S. K., Mittal, R., Reddy, V. R.   +5 more
core   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Magnetic control of large room-temperature polarization

, 2009
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and ferroelectric ...
Ashok Kumar, Astrov D N, Astrov D N, Bao D, Correa M, Cross L E, Curie P, Dzyaloshinskii I E, Dzyaloshinskii I E, Fox D L, Freeman A J, G L Sharma, J F Scott, Karmarkar M, R Blinc, R Pirc, R S Katiyar, Samara G A, Scott J F, Smolenskii G A, Smolenskii G A, Smolenskii G A, van den Brink J, Ventura J, Wu E, Ye Z-G   +25 more
core   +2 more sources

Topological Point Defects in Relaxor Ferroelectrics

Physical Review Letters, 2016
First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba(Zr_{0.5}Ti_{0.5})O_{3} (BZT) and Pb(Sc_{0.5}Nb_{0.5})O_{3} (PSN) systems, and the
Nahas, Y., Prokhorenko, S., Kornev, I., Bellaiche, L.   +3 more
openaire   +3 more sources

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

Advanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon, Doyeong Yeo, In‐Chul Hwang, In Hwan Jung, Joon Hak Oh   +4 more
wiley   +1 more source

Dielectric properties of ceramics in lead zirconate titanate - lead magnesium niobate system [PDF]

Songklanakarin Journal of Science and Technology (SJST), 2004
In this study, the xPb(Zr0.52Ti0.48)O3 - (1-x)Pb(Mg1/3Nb2/3)O3 (when x = 0, 0.1, 0.3, 0.5, 0.7, 0.9, and 1.0) ceramic composites are prepared from PZT and PMN powders by a conventional mixed-oxide method.
Pitak Laoratakul, Rattikorn Yimnirun, Supon Ananta   +2 more
doaj  

Origin of the "Waterfall" Effect in Phonon Dispersion of Relaxor Perovskites [PDF]

, 2003
Inelastic neutron scattering study of the perovskite relaxor ferroelectric PZN:8%PT elucidates the origin of the previously reported unusual kink on the low frequency transverse phonon dispersion curve (known as "waterfall" effect).
Hlinka, J., Kamba, S., Kulda, J., Petzelt, J., Randall, C. A., Zhang, S. J.   +5 more
core   +2 more sources