Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review
National Science Open, 2023 Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal ...
Liu Zhetong +7 more
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Publisher Correction: Carrier lifetime enhancement in halide perovskite via remote epitaxy [PDF]
Nature Communications, 2019 An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Jie Jiang +23 more
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Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer [PDF]
Nature CommunicationsThe recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential ...
Chang Liu +13 more
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Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures [PDF]
Nano ConvergenceTwo-dimensional (2D) transition-metal dichalcogenide (TMDC) heterostructures are promising for next-generation optoelectronics, yet the mechanisms controlling their vertical heteroepitaxy remain poorly understood.
Lia Saptini Handriani +8 more
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Correction: Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review [PDF]
Nano Convergence, 2023 Jongho Ji +9 more
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Roles of Nanoscale Defects of Graphene in Remote Epitaxy of GaN
SmallAbstract Remote epitaxy through graphene enables the fabrication of freestanding membranes, facilitating the “peel‐and‐stack” process for semiconductor hetero‐integration. While previous studies have emphasized graphene thickness, substrate bonding ionicity, and damage‐free transfer of graphene for implementing ...
Dong-Seon Lee
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NatureRemote epitaxy, in which an epitaxial relation is established between a film and a substrate through remote interactions, enables the development of high-quality single crystalline epilayers and their transfer to and integration with other technologically crucial substates1,2.
Yan Xin, Jian Shi, Ru Jia
exaly +5 more sources
Control of ternary alloy composition during remote epitaxy on graphene
Physical Review Materials, 2023 Understanding the sticking coefficient $σ$, i.e., the probability of an adatom sticking to a surface, is essential for controlling the stoichiometry during epitaxial film growth. However, $σ$ on monolayer graphene-covered surfaces and its impact on remote epitaxy are not understood.
Michael Arnold, Jason Kawasaki
exaly +3 more sources
Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote? [PDF]
, 2021 Abstract The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote ‘thru-hole’ epitaxy.
Dongsoo Jang +8 more
openaire +3 more sources
MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
Nanomaterials, 2022 The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates ...
Kazimieras Badokas +8 more
doaj +1 more source