Results 261 to 270 of about 2,035,960 (383)

Clean‐Limit 2D Superconductivity in a Thick Exfoliated Kagome Film

open access: yesAdvanced Functional Materials, EarlyView.
This study reports clean‐limit 2D superconductivity in a thick kagome system, analogous to the 3D case. It observes a drop in superfluid stiffness near the superconducting transition and a cusp‐like feature in the angular dependence of the upper critical field.
Fei Sun   +3 more
wiley   +1 more source

The Impact of Resilience on Injury Incidence, Recovery, and Performance in Athletes: A Systematic Review. [PDF]

open access: yesOrthop J Sports Med
Mastroianni MA   +8 more
europepmc   +1 more source

Single‐Step Synthesis of In‐plane 1T'‐2H Heterophase MoTe2 for Low‐Resistance Contacts

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step CVD method is developed to synthesize seamless in‐plane 1T'‐2H MoTe2 heterophase junctions with precise phase control and uniform large‐area coverage. The resulting transistors, incorporating 1T' MoTe2 contacts and 2H MoTe2 channels, exhibit ultralow contact resistance, offering a scalable solution to the long‐standing challenge of ...
Ye Lin   +9 more
wiley   +1 more source

Differentiating the Synergistic Interactions Between Li+ Salts and Cyclic to Linear Carbonate Ratios to Enable Wide‐Temperature Performance of Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The coordination in carbonate solvents and degradation products of lithium difluoro(oxolato) borate (LiDFOB) salt enables sufficient passivation of both LiNi0.8Mn0.1Co0.1O2 (NMC811) cathode and graphite anode in the absence of ethylene carbonate (EC).
Thomas J. Watts   +2 more
wiley   +1 more source

Self-control as a mediator between caregiver burden and psychological resilience among psychiatric caregivers in Oman. [PDF]

open access: yesSci Rep
Al Marshoudi AR   +5 more
europepmc   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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