Results 181 to 190 of about 449,331 (264)

Natural variation in SBRR1 shows high potential for sheath blight resistance breeding in rice. [PDF]

open access: yesNat Genet
Feng Z   +25 more
europepmc   +1 more source

The Ficus erecta genome aids Ceratocystis canker resistance breeding in common fig (F. carica). [PDF]

open access: yesPlant J, 2020
Shirasawa K   +8 more
europepmc   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

PEDOT‐Based Eutectogel Electrode Arrays for Enhanced High‐Resolution Electrogastrography: Fabrication, Stability, and Wearable Performance

open access: yesAdvanced Functional Materials, EarlyView.
Here, we present a high‐density PEDOT eutectogel electrode array for enhanced body surface gastric mapping. Silver electrodes are blade‐coated onto flexible substrates, followed by electrogelation of PEDOT:PSS and the deposition of a PEDOT:LS eutectogel.
Christopher Slaughter   +8 more
wiley   +1 more source

Nanoscale Mapping of Plasmonic Charge Transport in Nano‐Resonators Based on Resistive Switching Materials

open access: yesAdvanced Functional Materials, EarlyView.
In this strategy, a conductive nano‐probe is employed to induce nanoscale phase transitions and map the nanoscale conductivity and trap density of GST films. By utilizing the contrasting properties of phase‐change states, nano‐resonators are fabricated that exhibit plasmonic conduction and dramatically different transport characteristics.
Sunwoo Bang   +4 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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