Results 171 to 180 of about 4,425 (277)

UV-Laser Annealing for Improved Resistive Switching Performance and Reliability of Flexible Resistive Random-Access Memory

, 2022
Seung Woo Han, Moo Whan Shin
openalex   +1 more source

Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory

Advanced Materials, EarlyView.
A three‐step sacrificial atomic layer deposition (s‐ALD) process enables wafer‐scale growth of ultrathin and uniform antimony (Sb) thin films. An ultrathin (≈4 nm) Sb film is uniformly deposited with its characteristic bilayer structure (Sb‐Sb) aligned along the substrate.
Gwangsik Jeon, Sangmin Jeon, Seunghwan Lee, Jeong Woo Jeon, Wonho Choi, Byongwoo Park, Sungjin Kim, Chanyoung Yoo, Hyejin Jang, Cheol Seong Hwang   +9 more
wiley   +1 more source

Defect Engineering in Transition Metal Oxide-based Resistive Random Access Memory

, 2020
Stefan Petzold
openalex   +2 more sources

Materials and System Design for Self‐Decision Bioelectronic Systems

Advanced Materials, EarlyView.
This review highlights how self‐decision bioelectronic systems integrate sensing, computation, and therapy into autonomous, closed‐loop platforms that continuously monitor and treat diseases, marking a major step toward intelligent, self‐regulating healthcare technologies.
Qiankun Zeng, Hong Liu, Yongheng Zhang, Youbin Zheng, Xuyin Ding, Mengni Zhu, Guoyue Shi, Yan Wang, Hossam Haick, Min Zhang   +9 more
wiley   +1 more source

A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography. [PDF]

Adv Sci (Weinh)
Yang Q, Kang Y, Zhang C, Chen H, Zhang T, Bian Z, Su X, Xu W, Sun J, Wang P, Xu Y, Yu B, Zhao Y.   +12 more
europepmc   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

Scanning Thermal Microscopy Method for Self-Heating in Nonlinear Devices and Application to Filamentary Resistive Random-Access Memory. [PDF]

ACS Nano
Harnack N, Rodehutskors S, Gotsmann B.
europepmc   +1 more source

Fabrication of High-Performance Hydrogen Sensor Based on Tiox/Pt Nanocontacts Via Material Migration in Resistive Random-Access Memory Technology

Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga   +2 more
openalex   +1 more source

Atomic Layer Deposition Films for Resistive Random‐Access Memories (Adv. Mater. Technol. 16/2024) [PDF]

Chunxue Hao, Jun Peng, Robert Zierold, Robert H. Blick   +3 more
openalex   +1 more source

MEMS‐Based Magnetoelectric Antennas for Wireless Power Transmission in Brain‐Implantable Devices

Advanced Materials Technologies, EarlyView.
Magnetoelectric (ME) antennas allow the minimization of the invasiveness of brain implantable devices, via powering wirelessly systems able to actuate neural tissue. In order to achieve the necessary power efficiency transmission, the choice of the materials and the system assembly is vital.
Laura Mazón‐Maldonado, Jungang Zhang, María Cerezo‐Sánchez, Mahdieh Shojaei Baghini, Roghaieh Parvizi, Hadi Heidari   +5 more
wiley   +1 more source