Results 301 to 310 of about 84,204 (350)
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A complementary resistive switching neuron
Nanotechnology, 2022Abstract The complementary resistive switching (CRS) memristor has originally been proposed for use as the storage element or artificial synapse in large-scale crossbar array with the capability of solving the sneak path problem, but its usage has mainly been hampered by the inherent destructiveness of the read ...
Xinxin Wang, Huanglong Li
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Switching Characteristics of Antiparallel Resistive Switches
IEEE Electron Device Letters, 2012Antiparallel resistive switches exhibit - characteristics of various types, depending on the properties of individual switches and applied compliance-current levels. When one switch is on and the other is off, an application of voltage of opposite polarity may lead to the following: 1) rupture of the first switch followed by a bridge formation in the ...
Tong Liu +3 more
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Nanoscale Organic Ferroelectric Resistive Switches
The Journal of Physical Chemistry C, 2014Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their operational mechanism.
Khikhlovskyi, V. +5 more
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Nanoionics-based resistive switching memories
Nature Materials, 2007Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable.
Rainer, Waser, Masakazu, Aono
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IEEE Transactions on Device and Materials Reliability, 2013
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
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This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
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Science, 2019
Antibiotic Resistance Clonal bacterial colonies will often grow dissimilar patches, similar to a tortoiseshell pattern. These differing phenotypes arise by reversible mechanisms called phase variation. Jiang et al. developed an algorithm to survey bacterial genomes for invertible promoters that cause phase variation.
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Antibiotic Resistance Clonal bacterial colonies will often grow dissimilar patches, similar to a tortoiseshell pattern. These differing phenotypes arise by reversible mechanisms called phase variation. Jiang et al. developed an algorithm to survey bacterial genomes for invertible promoters that cause phase variation.
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Reset Switching Probability of Resistive Switching Devices
IEEE Electron Device Letters, 2011The reset switching probability of resistive switching devices is characterized in array testing. The measured switching probability can be quantitatively explained based on the mechanism of a thermally activated reset process. An analytical model of switching probability is developed to describe the dependence of reset probability on operation ...
null An Chen, null Ming-Ren Lin
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Switching control of resistive switching devices
Applied Physics Letters, 2010Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and ...
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Optimal switch resistances in Switched Capacitor Converters
2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel, 2010Switched Capacitor Converters (SCC) losses are analyzed and the rules for the selection of SCC parameters (such as switch resistances, capacitors values and switching frequency) to meet specific efficiency requirements, are developed. This is done by first applying an advanced methodology for calculating the equivalent resistance (R e ) of the SCC in ...
Michael Evzelman, Sam Ben-Yaakov
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Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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