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Advances in resistive switching based memory devices
Journal of Physics D: Applied Physics, 2019Among the emerging memories, resistive switching (RS) based resistive random-access memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal structures, low power consumption, long endurance and retention ...
S. Munjal, N. Khare
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Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory
Journal of Electronic Materials, 2017To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell.
Sungyeon Ryu +2 more
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Resistive switching materials for information processing
Nature Reviews Materials, 2020Zhongrui Wang +6 more
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In-memory computing with resistive switching devices
Nature Electronics, 2018D. Ielmini, H. Wong
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Advances in Materials, 2009R. Waser +3 more
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Resistive Switching in Emerging Materials and their Characteristics for Neuromorphic Computing
Materials Today Electronics, 2022M. Asif, Ashok Kumar V
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Switching in Resistance Tapchangers
2020Tapchangers are now made by several manufacturers around the world. Some designs are new, but some are decades old. Materials, designs, and physical arrangements differ. It is not possible, nor is it necessary to include in a book of this kind every execution.
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Filamentary-Based Resistive Switching
2016Open image in new window Based on ionic motion, filamentary-based resistive switches are an important class of emerging electronic devices. This chapter describes their basic operative principles and provides the reader with a sufficient basis to follow the experimental work of this dissertation.
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