Results 161 to 170 of about 45,065 (245)

Digital‐Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto‐Electronic Logic and Sen‐Memory Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Herein, the development of a protective face mask based on a hierarchically porous cerium metal‐organic framework intensifying the bacterial entrapment ability and catalytic ROS generation at ambient condition is presented. It presents almost 100% antimicrobial efficacies for different bacteria even though in insufficient light (e.g.
Jiaqi Xu   +7 more
wiley   +1 more source

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng   +3 more
wiley   +1 more source

An Ultrathin Optoelectronic Memristor with Dual‐Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou   +4 more
wiley   +1 more source

Polarity modulation in compositionally tunable Bi<sub>2</sub>O<sub>2</sub>Se thin films. [PDF]

open access: yesNat Commun
Wang YJ   +18 more
europepmc   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

open access: yesAdvanced Electronic Materials, EarlyView.
This study presents the first experimental demonstration of a vertically stacked complementary field‐effect transistor (CFET) using zinc oxide (ZnO) and tellurium (Te), providing a significant advancement in CFET technology. Furthermore, functional logic gates with a minimal footprint are demonstrated, confirming that vertical integration of CFETs is ...
Kiyung Kim   +8 more
wiley   +1 more source

Tribus: semi-automated discovery of cell identities and phenotypes from multiplexed imaging and proteomic data. [PDF]

open access: yesBioinformatics
Kang Z   +12 more
europepmc   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

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