Results 221 to 230 of about 46,994 (285)

Linear optical wave energy redistribution methods for photonic signal processing. [PDF]

open access: yesNpj Nanophoton
Rowe C   +10 more
europepmc   +1 more source

High‐Density Flexible Neural Implants with Submicron Feedline Resolution

open access: yesAdvanced Electronic Materials, EarlyView.
Optimization of microfabrication methods using optical contact lithography (OCL) and electron beam lithography (EBL) enables the fabrication of 64‐channel, high‐density, parylene‐C‐based intracortical implants with submicron feedlines as narrow as 400 and 50 nm, respectively.
Lina Koschinski   +10 more
wiley   +1 more source

Variations in kinase and effector signaling logic in a bacterial two component signaling network. [PDF]

open access: yesJ Biol Chem
Swingle D   +6 more
europepmc   +1 more source

Inkjet Printable Semiconducting Inks for Enhancement‐Mode Organic Electrochemical Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Inkjet‐printable semiconducting inks based on the p‐type molecularly de‐doped PEDOT:PSS and the n‐type BBL enable cleanroom‐free fabrication of enhancement‐mode organic electrochemical transistors (OECTs). Printed devices are used for logic gate operation and electrochemical sensing of ascorbic acid.
Alan Eduardo Avila Ramirez   +7 more
wiley   +1 more source

Current Flow Mapping in Conducting Ferroelectric Domain Walls Using Scanning NV‐Magnetometry

open access: yesAdvanced Electronic Materials, EarlyView.
Domain walls in ferroelectrics are mobile, electrically conductive interfaces that hold promise as functional elements in next‐generation, “reconfigurable” electronics. They often form complex networks, making transport characterization challenging. Current densities are visualised in conducting ferroelectric domain wall devices directly by imaging the
Conor J. McCluskey   +3 more
wiley   +1 more source

Unveiling the 3D Spin Texture of Nanowires Using Integrated Microscopy Techniques. [PDF]

open access: yesNano Lett
Fernández-González C   +14 more
europepmc   +1 more source

Copper Tin Halide p‐Type TFT Enabled Solution Processed Monolithic 3D CMOS Circuits

open access: yesAdvanced Electronic Materials, EarlyView.
By incorporating tin(II) cations and high electronegativity halide anions (Cl−/F−) into copper(I) iodide, a superior p‐type semiconductor is obtained with enhanced film stability, morphology, and electrical properties. Copper tin halide TFTs achieve mobilities over 20 cm2 Vs−1 under low operating voltages.
Yutong Liu   +7 more
wiley   +1 more source

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