Results 91 to 100 of about 160 (130)
J Comput Phys, 2015 Some of the next articles are maybe not open access.
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Nonlinear resonant tunneling diode (RTD) circuits for microwave A/D conversion
Optik, 2013Abstract Short-duration electrical pulses play important roles in ultrafast time-domain metrology: they are used to sample rapidly varying signals or as probe signals in ranging radars, time-domain reflectometry and in communication. In this work, we design a nonlinear transmission, which is loaded with resonant tunneling diode to be suitable for ...
Hala J El-Khozondar
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Physical Modeling of Asymmetric Spacers Resonant Tunneling Diodes (RTDs)
2021 IEEE Latin America Electron Devices Conference (LAEDC), 2021The Resonant Tunneling Diode (RTD) is one of the most promising candidates for room temperature generation of terahertz (THz) radiation. Therefore, many attempts have been reported to increase the oscillation frequency beyond 1 THz either by reducing the mesa area or by thickening the collector spacer layer.
Alqurashi, Ahmed +1 more
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High-Power Coherent Emission From Arrays of Resonant-Tunneling-Diode (RTD) Oscillators
2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)Fanqi Meng, Hartmut Roskos
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Resonant tunnel diode (RTD) stability
28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005., 2005Small signal RTD behavior defines whether circuit applications will be stable or unstable. The paper presents a MATLAB analysis of a 3 rd -order model to delineate graphical stability regions, and to interpret these with the assistance of prior 2 nd -order results for Esaki tunnel diodes (TDs.) A new 4 th -order model is developed, which is more ...
J.E. Morris, D.W. Matson
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A novel interband-resonant tunneling diode (I-RTD) based high-frequency oscillator
Solid-State Electronics, 2004A novel type of interband-RTD (I-RTD) based upon staggered-bandgap heterostructures was investigated. A detailed theoretical analysis of the time-dependent characteristics of an I-RTD based upon a type-II resonant tunneling heterostructure is presented.
D. Woolard +2 more
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Double Barrier Si-based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding
ECS Meeting Abstracts, 2008Abstract not Available.
Taehun Lee +3 more
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2011
Abstract : This final report discusses a completely novel approach for generating THz frequency radiation that utilizes interband transitions and tunneling processes which can be induced simultaneously within double-barrier (DB) GaSb/InAs/GaSb broken-gap (BG) resonant-tunneling-diodes (RTDs). This DB-BG-RTD device will utilizes two distinct innovations.
Dwight Woolard, Weidong Zhang
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Abstract : This final report discusses a completely novel approach for generating THz frequency radiation that utilizes interband transitions and tunneling processes which can be induced simultaneously within double-barrier (DB) GaSb/InAs/GaSb broken-gap (BG) resonant-tunneling-diodes (RTDs). This DB-BG-RTD device will utilizes two distinct innovations.
Dwight Woolard, Weidong Zhang
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The instability of surface plasma vibrations in resonant tunneling diodes (RTD)
Solid State Communications, 1992It is shown that, if the negative differential conductance of a RTD is large enough a diode can oscillate without being placed in an external resonator. In this case, the RTD itself serves as a resonator for the surface plasma vibrations which can exist in the heavily-doped layers (cathode and anode) and are excited as a result of the negative ...
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ECS Transactions, 2008
Double barrier Si-based Resonant Tunneling Diode (RTD) structures were fabricated by ultra high vacuum (UHV) wafer bonding. 300 mm ultra thin body silicon-on-insulator (SOI) wafers with 10 nm top Si layers were developed and used for the integration of Si/SiO2((<3nm)/Si(<10nm)/SiO2(<3nm)/Si RTD structures.
Taehun Lee +9 more
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Double barrier Si-based Resonant Tunneling Diode (RTD) structures were fabricated by ultra high vacuum (UHV) wafer bonding. 300 mm ultra thin body silicon-on-insulator (SOI) wafers with 10 nm top Si layers were developed and used for the integration of Si/SiO2((<3nm)/Si(<10nm)/SiO2(<3nm)/Si RTD structures.
Taehun Lee +9 more
openaire +1 more source