Results 11 to 20 of about 160 (130)

Photo-Detectors Integrated with Resonant Tunneling Diodes [PDF]

Sensors, 2013
We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is ...
José M. L. Figueiredo, Charles N. Ironside, Henrique M. Salgado, Luis M. Pessoa, Bruno Romeira   +4 more
doaj   +2 more sources

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions [PDF]

Beilstein Journal of Nanotechnology, 2020
A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed.
Majid Sanaeepur
doaj   +2 more sources

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas [PDF]

Electronics (Switzerland), 2019
This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model.
Le Song, Weilian Guo, Fan Zhao
exaly   +3 more sources

Resonant Tunneling Diode‐Integrated Terahertz Transceiver Module for Wireless Communications

Advanced Photonics Research
Terahertz bands are essential for next‐generation wireless communications, offering ultrabroad bandwidth and unprecedented data throughput. However, realizing compact, low‐cost, broadband, and efficient terahertz transceiver modules remains challenging ...
Weijie Gao, Nguyen H. Ngo, Daiki Ichikawa, Mingxiang Li, Yuta Inose, Yuki Morita, Hidemasa Yamane, Yoshiharu Yamada, Shuichi Murakami, Yosuke Nishida, Tadao Nagatsuma, Withawat Withayachumnankul, Masayuki Fujita   +12 more
doaj   +2 more sources

Spin effects in InAs self-assembled quantum dots [PDF]

Nanoscale Research Letters, 2011
We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW).
Brasil Maria, Taylor David, Henini Mohamed, dos Santos Ednilson, Gobato Yara   +4 more
doaj   +2 more sources

Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors. [PDF]

Nanophotonics, 2023
Abstract We experimentally investigated the asymmetric dual‐grating‐gate plasmonic terahertz (THz) detector based on an InGaAs‐channel high‐electron‐mobility transistor (HEMT) in the gate‐readout configuration. Throughout the THz pulse detection measurement on the fabricated device, we discovered a new detection mechanism called the “3D rectification ...
Satou A, Negoro T, Narita K, Hosotani T, Tamura K, Tang C, Lin TT, Retaux PE, Takida Y, Minamide H, Suemitsu T, Otsuji T.   +11 more
europepmc   +2 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +2 more sources

Optimum device parameters to attain the highest peak to valley current ratio (PVCR) in resonant tunneling diodes (RTD) [PDF]

Physica B: Condensed Matter, 2021
Abstract Relations for the optimum well width, barrier width, and width of the spacer layer which correspond to the highest PVCR based on effective mass and barrier height in RTDs are proposed. The optimum spacer layer is found to be half of the de-Broglie wavelength associated with the bound state of the corresponding finite quantum well.
Sushree Ipsita, P.K. Mahapatra, P. Panchadhyayee   +2 more
openaire   +3 more sources

Effect of quantum barrier width and quantum resonant tunneling through InGaN/GaN parabolic quantum well-LED structure on LED efficiency

Results in Physics, 2021
The effect of quantum barrier width and electric field on the resonant tunneling through the double barrier In0.2Ga0.8N/GaN parabolic-quantum well light-emitting diode (LED) structure and LED efficiency was investigated analytically.
Hind Althib
doaj   +1 more source

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

Advanced Materials, Volume 35, Issue 27, July 6, 2023., 2023
2D layered materials, exhibiting exotic structural, electrical, and magnetic properties, provide a superior platform for implementing novel quantum devices—from tunneling diodes and transistors, to spin‐FETs, valley‐FETs, and qubits. The physics are highlighted and the opportunities and challenges of exploiting the unique quantum properties of 2D ...
Arnab Pal, Shuo Zhang, Tanmay Chavan, Kunjesh Agashiwala, Chao‐Hui Yeh, Wei Cao, Kaustav Banerjee   +6 more
wiley   +1 more source