Results 11 to 20 of about 194,755 (303)
info:eu-repo/semantics ...
Righetti Aurelie +8 more
+16 more sources
Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications
This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin
Yuang-Tung Cheng +6 more
doaj +1 more source
Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility
Highly sensitive ultraviolet (UV) photodetectors are highly desired for industrial and scientific applications. However, the responsivity of silicon photodiodes in the UV wavelength band is relatively low due to high-density Si/SiO2 interface states.
Qiaoli Liu +6 more
doaj +1 more source
In the Netherlands, Forensic Flexible Assertive Community Treatment (ForFACT) is used as a specialized form of outpatient intensive treatment. This outreaching type of treatment is aimed at patients with severe and long lasting psychiatric problems that ...
Marjam V. Smeekens +4 more
doaj +1 more source
Recent advances in self‐powered and flexible UVC photodetectors
Ultraviolet‐C (UVC) radiation is employed in various applications, including irreplaceable applications in military and civil fields, such as missile guidance, flame detection, partial discharge detection, disinfection, and wireless communication ...
Thi My Huyen Nguyen +3 more
doaj +1 more source
Porous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector
Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the ...
María R. Jimenéz-Vivanco +8 more
doaj +1 more source
With the advancement of portable optoelectronics, organic semiconductors have been attracting attention for their use in the sensing of white and near-infrared light.
Yang-Yen Yu +4 more
doaj +1 more source
“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications.
Guo-En Chang, Shui-Qing Yu, Greg Sun
doaj +1 more source
Nickel Doped Zinc Oxide Thin Films for Visible Blind Ultraviolet Photodetection Applications
The current research aims to investigate the effect of nickel doping on the structural and opto-electrical characteristics of zinc oxide thin films. Sol-gel spin coating technique has been utilized to deposit Zn _1-x Ni _x O (x = 0, 0.005, 0.010, and 0 ...
Sunil Agrohiya +6 more
doaj +1 more source
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors.
Gaudencio Paz-Martínez +7 more
doaj +1 more source

