Results 211 to 220 of about 1,125,542 (261)
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei +6 more
wiley +1 more source
Intelligent system for portfolio optimization for novel volatility forecasting using machine learning. [PDF]
Biswas T, Dey A, Mandal G, Ghosh N.
europepmc +1 more source
GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee +3 more
wiley +1 more source
Detecting Unusual Trading Patterns on Cryptocurrency Exchanges by Means of Complexity Measures. [PDF]
Zwydak J +3 more
europepmc +1 more source
Novel Optical Functionalities in Memristors
We present a tunnel junction memristor with expanded optical functionalities enabled by the integration of an ultra‐thin CdS barrier and a top ITO electrode. UV illumination triggers a photovoltaic response that can sense the memristor state. At very low temperatures, the UV light generates a high injection of photocarriers and produces a volatile ...
Isabel Tenreiro +6 more
wiley +1 more source
A Consistency-Aware Multimodal Sensing Framework for Short-Term Cross-Border Prediction Under Dynamic Trade. [PDF]
Wan Y +6 more
europepmc +1 more source
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Geopolitical risks and the spillover of food market risks: case analysis of the Chinese grain market. [PDF]
Li J, Yang Y.
europepmc +1 more source
Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
The quantile domain volatility shock transmission between carbon emission trading system and European emerging stock markets: Practical implications for portfolio optimization. [PDF]
Aljughaiman AA +3 more
europepmc +1 more source

