Results 231 to 240 of about 1,132,394 (292)

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Deformation mechanism and mechanical response of coal mine roadway roof in the unsupported area during rapid tunneling. [PDF]

Sci Rep
Wang S, Yang S, Guo W, Ma L, Yu Z, Wang P.   +5 more
europepmc   +1 more source

Stable Magnetic Nanodomains Engineered Via Ga+‐ion Irradiation For Deterministic Sequential Switching

Advanced Electronic Materials, EarlyView.
Tiny magnetic regions separated by domain walls can store data, but controlling them precisely is difficult. We use focused ion beams to create nanoscale “anisotropy wells” that pin these walls from both sides. This bidirectional pinning holds domains stable in either direction, even with no field applied.
Gijs W.A. Simons, Rik F.J. van Haren, Bert Koopmans   +2 more
wiley   +1 more source

Multi-spatial scale analysis of cutting-slope houses to landslide hazard in granite regions: A case study in central China. [PDF]

Sci Rep
Wu S, Zou G, Zhang L, Zhou B, Xu D, He C.   +5 more
europepmc   +1 more source

From Rock Cuttings to Physical Properties: Integrating Digital Rock Physics and Borehole Data from Traunreut, Southern Germany.

Angelly Serje Gutierrez, Mirko Siegert, Marcel Gurris, Erik Hans Saenger   +3 more
openalex   +1 more source

Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films

Advanced Electronic Materials, EarlyView.
Aluminum nitride (AlN) is a biocompatible piezoelectric material suitable for energy harvesting in MEMS resonators. Through rapid thermal annealing, a threshold for CMOS‐compatible processes is established. AlN improved its crystallinity and enhanced the piezoelectric coefficient by ∼160%. Devices show an improvement in the electromechanical properties
Laura Mazón‐Maldonado, Lucía Nieto Sierra, M. Pilar Villar Castro, Fernando Lloret‐Vieira, Isidoro Ruíz‐García, Des Gibson, Hadi Heidari, Carlos García Núñez   +7 more
wiley   +1 more source

Rake angle optimization for balanced efficiency and durability in PDC cutter cutting granite interaction via infrared thermal dynamics and fragmentation mechanism. [PDF]

Sci Rep
He X, Zheng B, Luo Z, Hu P, Yang Y, Yin G.   +5 more
europepmc   +1 more source

Rock Mechanical Parameters Prediction Based on Digital Drilling Cuttings Mineral Logging Data

Xin Nie, Yulong Hou, Zhansong Zhang
openalex   +1 more source

Decoupled Dielectric Optimization and YbOx Contact Engineering in All‐Spray‐Processed Oxide Thin‐Film Transistors

Advanced Electronic Materials, EarlyView.
Fully spray‐processed oxide thin‐film transistors are advanced by decoupling dielectric quality from contact energetics. Thermochemically densified MgO suppresses defect‐mediated leakage and improves electrostatic control, while an ultrathin YbOx interlayer induces a 1.67 eV work‐function shift that boosts mobility from ∼40 to ∼94 cm2 V−1 s−1.
Ahmed Mohamed, Nathan R. Halcovitch, Oleg V. Kolosov, Arokia Nathan, William I. Milne, George Adamopoulos   +5 more
wiley   +1 more source

Strength Degradation of Sandstone Under Coupled Loading and Freeze-Thaw Cycles: Experimental Study and Discrete Element Numerical Simulation. [PDF]

Materials (Basel)
Sun Y, Bai Y, Hou J, Chen M, Meng L, Zhang P.   +5 more
europepmc   +1 more source