Results 171 to 180 of about 36,405 (230)

Phase‐Dependent Oxygen Defect Energetics in Epitaxial NbN/AlN/NbN Films

open access: yesAdvanced Science, EarlyView.
Phase dependent oxygen defect energetics in epitaxial δ‐NbN/AlN/δ‐NbN and β‐Nb2N/AlN/β‐Nb2N trilayers. Atomic‐scale analysis and first‐principles calculations reveal distinct oxygen incorporation pathways across NbN polymorphs. Layer resolved defect formation energies show that O is energetically more favorable within δ‐NbN electrodes, whereas in β ...
Prachi Garg   +10 more
wiley   +1 more source

PARP Inhibitors plus Anlotinib as Bridging Therapy for Armored CAR‐T Cells in Ovarian Cancer Enhances Infiltration and Antitumor Efficacy

open access: yesAdvanced Science, EarlyView.
This study shows that a PARP inhibitor combined with anlotinib, administered as bridging therapy, preconditions the tumor microenvironment to enhance the infiltration and antitumor activity of subsequently infused CAR‐T cells across preclinical ovarian cancer models, supporting bridging therapy as a promising strategy to address limited CAR‐T cell ...
Huayi Li   +20 more
wiley   +1 more source

Robust Stitching Interface and Deep Learning Empowered Hydrogel Human‐Machine Interface

open access: yesAdvanced Science, EarlyView.
A molecular design strategy is presented that exploits synergistic carboxylate anion–quaternary ammonium interactions to simultaneously strengthen the hydrogel–PET interface and the bulk hydrogel network. Integrated with deep learning signal processing, the stable hydrogel–PET interface enables consistent signal acquisition and reliable human‐machine ...
Hao Dong   +11 more
wiley   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

open access: yesAdvanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe   +11 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

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