Results 141 to 150 of about 1,220,543 (328)
Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors
Advanced Functional Materials, EarlyView.Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee +10 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In this research, it is demonstrated that dual nitrogen and sulfur doping in hollow carbon spheres creates a tunable coordination environment that stabilizes cationic Pd single atoms as robust organometallic complexes, enabling high selectivity and stability for electrochemical hydrogen peroxide production under harsh acidic and peroxide‐rich ...
Guilherme V. Fortunato +16 more
wiley +1 more source
Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals
Advanced Functional Materials, EarlyView.Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus +5 more
wiley +1 more source
Transrodnost u pripovijesti i filmu Albert Nobbs
Anafora, 2017 Promišljajući o naratologiji i njezinu odnosu s drugim analitičkim i metodološkim modelima unutar humanističkih znanosti, u radu se analizira položaj likova pripovijetke Albert Nobbs (1918) irskog pisca Georgea Moorea u odnosu na istoimenu filmsku ...
Dejan Varga
doaj
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, EarlyView.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source