Results 251 to 260 of about 88,026 (319)

Vertical Electrolyte‐Gated Transistors: Structures, Materials, Integrations, and Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Vertically structured electrolyte‐gated transistors exhibit significantly improved electrical performance compared to their planar counterparts by decoupling the channel length from the resolutions of the fabrication techniques. Herein, recent progress on the vertical electrolyte‐gated transistors is reviewed from the aspects of device structures ...
Bin Bao   +7 more
wiley   +1 more source

ULF Multi‐Key Tunable Magnetoelectric Antenna Array with Enhanced Communication Data Rate

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a reconfigurable magnetoelectric antenna with a dual‐asymmetric cantilever structure. By adjusting its fixed boundary conditions, the antenna's resonant frequency is tunable over a 500 Hz range within the ultra‐low‐frequency (ULF) band.
Qianshi Zhang   +7 more
wiley   +1 more source

Enhancing Thermoelectric Performance of Cd₃P₂ by Alloying with Dirac Material Cd₃As₂

open access: yesAdvanced Electronic Materials, EarlyView.
This study demonstrates that alloying Cd₃P₂ with Dirac material Cd₃As₂ significantly enhances its thermoelectric performance. Key improvements include increased carrier mobility, reduced effective mass, and lower deformation potential, resulting in a doubled power factor and improved thermoelectric efficiency, which renders this material applicable for
Kunling Peng   +11 more
wiley   +1 more source

CH3O‐PEABr Passivated Quasi‐2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light‐Emitting Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
Green quasi‐2D perovskite LEDs based on CH3O‐PEABr modified BA2Cs4Pb5Br16 films achieve a peak EQE of 19.47%. The suppressed defect density enables high‐performance electroluminescence, offering a scalable strategy for efficient and durable electroluminescent devices.
Yuxin Liu   +5 more
wiley   +1 more source

Compression of room impulse responses for compact storage and fast low-latency convolution. [PDF]

open access: yesEURASIP J Audio Speech Music Process
Jälmby M   +2 more
europepmc   +1 more source

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez   +14 more
wiley   +1 more source

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