Results 151 to 160 of about 1,039,315 (343)

Stop using root-mean-square error as a precipitation target!

Root-mean-square error (RMSE) remains the default training loss for data-driven precipitation models, despite precipitation being semi-continuous, zero-inflated, strictly non-negative, and heavy-tailed. This Gaussian-implied objective misspecifies the data-generating process because it tolerates negative predictions, underpenalises rare heavy events ...
openaire   +2 more sources

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

Advanced Functional Materials, EarlyView.
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam, Pravin Karna, Niraj Bhatt, Sandip Thakur, Helge Heinrich, Daniel M. Hirt, Saman Zare, Christopher Jezewski, Rinus T.P. Lee, Kandabara Tapily, John T. Gaskins, Colin D. Landon, Sean W. King, Ashutosh Giri, Patrick E. Hopkins   +14 more
wiley   +1 more source

Research on time series prediction of hybrid intelligent systems based on deep learning

Intelligent Systems with Applications
Power forecasting plays a crucial role in the operation of smart grid system, which is indispensable for making the operation plan of power system, improving economic efficiency and ensuring the quality of power supply.
Shang Jin, Wang Weiqing, Shi Bingcun, Xu Xiaobo   +3 more
doaj   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

The Order Barrier for Strong Approximation of Rough Volatility Models

, 2016
We study the strong approximation of a rough volatility model, in which the log-volatility is given by a fractional Ornstein-Uhlenbeck process with Hurst parameter ...
Neuenkirch, Andreas, Shalaiko, Taras
core  

Band Alignment in In‐Oxo Metal Porphyrin SURMOF Heterojunctions

Advanced Functional Materials, EarlyView.
Porphyrin core metalation in indium‑oxo SURMOFs enables systematic tuning of band edge positions without altering the crystal structure. First‑principles calculations reveal type‑I and type‑II heterostructures as well as multi‑junction energy cascades, establishing a modular strategy for exciton funneling and charge separation in optoelectronic ...
Puja Singhvi, Nina Vankova, Thomas Heine
wiley   +1 more source

Mechanical Properties of Architected Polymer Lattice Materials: A Comparative Study of Additive Manufacturing and CAD Using FEM and µ‐CT

Advanced Functional Materials, EarlyView.
This study examines how pore shape and manufacturing‐induced deviations affect the mechanical properties of 3D‐printed lattice materials with constant porosity. Combining µ‐CT analysis, FEM, and compression testing, the authors show that structural imperfections reduce stiffness and strength, while bulk material inhomogeneities probably enhance ...
Oliver Walker, Thierry Roland, Damien Favier, Antoine Egele, Michael Heymann, Cosima Stubenrauch   +5 more
wiley   +1 more source

The mean and standard error of cross-correlation (CC) and root mean square of the difference (RMS. Diff) across the participants and the cycles for shoulder flexion (SF), internal rotation (SI), abduction (SA) angle and angular velocity.

, 2015
Samani Afshin, Pontonnier Charles, Dumont Georges, Madeleine Pascal   +3 more
openalex   +2 more sources

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu, Hongyi Dou, Jeremy B. Gan, Cun Li, Xuanyu Sheng, Juanjuan Lu, Abhijeet Choudhury, Jialong Huang, Yizhi Zhang, Zhongxia Shang, Ye Cao, Xinghang Zhang, Haiyan Wang   +12 more
wiley   +1 more source

Ion‐Selective Microporous Membranes via One‐Step Copolymerization Enable High‐Performance Redox Flow Batteries

Advanced Functional Materials, EarlyView.
A scalable one‐step copolymerization strategy is developed to produce low‐cost microporous ion exchange membranes that boost both the efficiency and lifespan of flow batteries. When combined with organic electrolytes in aqueous systems, these membranes enable safe and cheap flow battery energy storage, supporting the widespread integration of renewable
Jiaye Liu, Chunchun Ye, Ying Ma, Rui Tan, Xiangwen Wang, Huiting Zhang, Peng Song, Quan‐Fu An   +7 more
wiley   +1 more source