Results 141 to 150 of about 13,405 (223)

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Engineered anchoring aptamers induce relocalization and functional inactivation of transcription factors. [PDF]

Sci Adv
Ling N, Wu H, Zhang Y, Yao S, Liu F, Tang X, Xie T, Yuan Y, Wei X, Dai J, Chen W, Yan M, Wang Z, Peng T, Zhang Y, Wang H, Wu J, Ye M, Wu W.   +18 more
europepmc   +1 more source

Multi-lifecycle Assessment of Close-loop Recyclable Wind Turbine Blades. [PDF]

Mater Circ Econ
Pender K, Romoli F, Fuller J.
europepmc   +1 more source

Stability of Lead‐Free Perovskite Solar Cells

Advanced Sustainable Systems, Volume 10, Issue 3, March 2026.
This review article discusses the very recent status of stability of lead‐free perovskite solar cells, possible challenges, fabrication techniques, the degradation mechanism of lead‐free PSCs affecting stability, possible causes hindering the simultaneous improvement of efficiency and stability of lead‐free PSCs, potential outlook, and future research ...
Pranta Barua, Naveen Kumar Elumalai, Ashraf Uddin, Prashant Sonar, Kannoorpatti Krishnan   +4 more
wiley   +1 more source

Evidence for topological contribution to spin shift current in antiferromagnetic Ti[Formula: see text]C[Formula: see text]. [PDF]

Sci Rep
Sufyan A, Abdullah HM, Larsson JA, Tyner AC.   +3 more
europepmc   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, Volume 13, Issue 13, 3 March 2026.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Configuration-packing synergy enabling integrated crystalline-state RTP and amorphous-state TADF. [PDF]

Beilstein J Org Chem
Wang R, Wu Y.
europepmc   +1 more source

Giant Isotope Effect in Metal–Organic Frameworks Boosts Unprecedented Photo‐ and Radio‐Luminescence Enhancement

Advanced Science, Volume 13, Issue 14, 9 March 2026.
Deuterated MOFs in this work exhibited unprecedented giant luminescence isotope effect via O─H oscillator suppression, achieving maximal solid‐state materials emission enhancement. This yields significantly improved X‐ray detection sensitivity and imaging resolution, marking the first integration of MOFs with isotopic luminescence and opening new ...
Junhao Lu, Dan Zhou, Xianhuan Hao, Hao Lu, Zhongyuan Zhang, Yuhuan Jia, Sen Mei, Ye Huang, Songbai Tang, Zhiyong Peng, Lanhua Chen, Mengjia Yuan, Lixi Chen, Shuaihua Wang, Meiling Feng, Yanlong Wang, Shuao Wang   +16 more
wiley   +1 more source

Impact of Proximal Conjoint Tendon Injury on Return to Play in the BF-ST Complex: A Prospective MRI-Based Study. [PDF]

Diagnostics (Basel)
Wada M, Okunuki T, Sugimoto T, Tanaka Y, Kumai T.   +4 more
europepmc   +1 more source

Urea‐Formaldehyde Resin Confined Silicon Nanodots Composites: High‐Performance and Ultralong Persistent Luminescence for Dynamic AI Information Encryption

Advanced Science, Volume 13, Issue 17, 23 March 2026.
Schematic illustration of SiNDs composite materials synthesis and its internal photophysical process mechanism. And an AI‐assisted dynamic information encryption process. ABSTRACT Persistent luminescence materials typically encounter an intrinsic trade‐off between high phosphorescence quantum yield (PhQY) and ultralong phosphorescence lifetime.
Yulu Liu, Lei Cao, Lele Gao, Panyong Wang, Qiannan You, Xinpei Pang, Li Li, Mingzheng Jia, Wen‐Fei Dong, Minghui Zan   +9 more
wiley   +1 more source