Results 161 to 170 of about 323,715 (337)

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Why video referees ruin football

open access: gold, 2023
Kjetil K. Haugen, Knut Heen
openalex   +1 more source

Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere   +5 more
wiley   +1 more source

A Scalable, Durable, Fire‐Safe All‐Day Passive Radiative Cooling Coating for Sustainable Buildings

open access: yesAdvanced Functional Materials, EarlyView.
This study reports a scalable, durable coating that combines a fire‑retardant copolymer adhesive, hollow glass microspheres, and boron oxide to achieve passive radiative cooling with over 94% solar reflectance and >95% mid‑infrared emissivity. The coating maintains performance after UV and rain exposure and exhibits UL‑94 V‑0 fire resistance, enabling ...
Zhewen Ma   +8 more
wiley   +1 more source

Publisher Correction: Senolytic effects of a modified Gingerenone A. [PDF]

open access: yesNPJ Aging
Moaddel R   +16 more
europepmc   +1 more source

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

open access: yesAdvanced Functional Materials, EarlyView.
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra   +8 more
wiley   +1 more source

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