Results 91 to 100 of about 42,237 (297)

Silicon‐Integrated Next‐Generation Plasmonic Devices for Energy‐Efficient Semiconductor Applications

Advanced Materials Technologies, EarlyView.
Silicon (Si)‐integrated plasmonics offer a pathway to next‐generation, energy‐efficient semiconductor applications. This review highlights advances using complementary metal–oxide–semiconductor (CMOS)‐compatible materials like transparent conductive oxides and novel architectures, particularly coupled hybrid plasmonic waveguides (CHPWs).
Nasir Alfaraj, Amr S. Helmy
wiley   +1 more source

Measurement of Microwave Acoustic Attenuation in Sapphire and Rutile using Nickel-Film Transducers [PDF]

, 1965
R. A. Wilson, H.J. Shaw, D.K. Winslow
openalex   +1 more source

Photonic Annealing of Inkjet Printed Graphene for Stretchable Wearable Healthcare Monitoring Devices

Advanced Materials Technologies, EarlyView.
Photonic annealing of inkjet printed graphene is used to produce sensing devices on flexible and stretchable substrates, of interest for flexible and healthcare electronics. Sensitivity to environmental and chemical stimuli, reaching temperature response of ≈0.096 %°C⁻¹, and acetone vapor sensing at physiologically‐relevant concentrations (0.2 ppm ...
Charles E. D. Heaton, Jonathan S. Austin, Leo Ruer, Nathan D. Cottam, Feiran Wang, Yinfeng He, Graham A. Rance, Felicity R. A. J. Rose, Ricky D. Wildman, Richard J. M. Hague, Oleg Makarovsky, Lyudmila Turyanska   +11 more
wiley   +1 more source

Dislocation Loops in Oxygen-Ion-Irradiated Sapphire [PDF]

, 1966
T.D. Gulden
openalex   +1 more source

Unveiling Ultrafast Spin‐Valley Dynamics and Phonon‐Mediated Charge Transfer in MoSe2/WSe2 Heterostructures

Advanced Optical Materials, Volume 13, Issue 8, March 13, 2025.
This study reveals the potential to manipulate spin‐valley polarization dynamics in MoSe2/WSe2 heterostructures by quantifying different scattering processes following selective photoexcitation. The results show that these heterostructures enable ultrafast valley‐selective charge transfer, with phonon scattering playing a significant role in the ...
Julian Wagner, Robin Bernhardt, Lukas Rieland, Omar Abdul‐Aziz, Qiuyang Li, Xiaoyang Zhu, Stefano Dal Conte, Giulio Cerullo, Paul H. M. van Loosdrecht, Hamoon Hedayat   +9 more
wiley   +1 more source

Erratum: Friction and Wear of Single-Crystal Sapphire Sliding on Steel [PDF]

, 1963
E. J. Duwell
openalex   +1 more source

Bright LaF3:Eu@Ir Phosphors Combining Two‐Photon Excitation, d → f Energy Transfer and Tunable Time‐Gated Chromaticity for Multicolor Cell Imaging

Advanced Optical Materials, EarlyView.
The surface functionalization of Eu‐doped LaF3 particles with a two‐photon absorbing IrIII complex results in the formation of ultrabright Eu:LaF3 phosphors, which exhibit a combination of short‐lived IrIII and long‐lived EuIII‐sensitized emissions. These Ir/Eu hybrids are effectively internalized by HEK‐293 cells without causing toxic effects, thereby
Yating Ye, Mattia Bramini, Paola Sánchez‐Moreno, Angel Orte, Juan‐Ramón Jiménez, Juan Manuel Herrera   +5 more
wiley   +1 more source

GENERAL RESEARCH: MECHANICAL BEHAVIOR OF SAPPHIRE [PDF]

, 1964
H. Conrad
openalex   +1 more source

Ellipticity‐Controlled Exceptional Points and Cross‐Polarized Phase Singularities in Multi‐Layer Silicon Guided Mode Resonant Metasurfaces

Advanced Optical Materials, EarlyView.
Omni‐polarizers that pull all input polarization states to an elliptical or linear polarization can be made using highly resonant bi‐layer metasurfaces. The ellipticity of the selected polarization can be controlled by choosing the layer separation.
Ben Goldberg, Shuang Zhang, Mark Lawrence   +2 more
wiley   +1 more source

Aleutian Disease of Mink: The Antibody Response of Sapphire and Pastel Mink to Aleutian Disease Virus [PDF]

, 1975
Marshall E. Bloom, Richard Race, W. J. Hadlow, Bruce Chesebro   +3 more
openalex   +1 more source