Results 191 to 200 of about 149,288 (320)

Channel temperature model for microwave AlGaN/GaN power HEMTs on SiC and sapphire

, 2004
Jon C. Freeman
openalex   +1 more source

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Advanced Electronic Materials, EarlyView.
A flipped electronically reconfigurable STO/LAO freestanding membrane is demonstrated and integrated with various host platforms via controlled transfer. Using ultra‐low‐voltage electron‐beam lithography, conductive nanostructures are created at the buried STO/LAO interface. This novel approach enables heterogeneous integration of flipped complex oxide
Ruiqi Sun, Ahmed Omran, Muqing Yu, Kyoungjun Lee, Keeyong Lee, Soli Sung, Sangho Oh, Patrick irvin, Jeremy Levy, Chang‐Beom Eom   +9 more
wiley   +1 more source

Epitaxial growth of wafer-scale 2D superconductor single crystals by metal-organic chemical vapor deposition. [PDF]

Nat Commun
Wang Z, Luo T, Shi L, Chen X, Zhang J, Yao Z, Lu J, Huang Y, Zhu Z, Zheng L, Li M, Kis A, Zhang L, Zhang J.   +13 more
europepmc   +1 more source

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors

Advanced Electronic Materials, EarlyView.
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann‐Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider   +5 more
wiley   +1 more source

Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits. [PDF]

Micromachines (Basel)
Li S, Zhang H, Ma Y, Wang Q, Wang K, Xia Y, Wu L, Li Y, Zhu T, Ye R, Wei J, Zhang L, Liu S, Sun W.   +13 more
europepmc   +1 more source

Metastable giant moments in Gd-implanted GaN, Si, and sapphire [PDF]

, 2011
X. Wang, Carsten Timm, X. M. Wang, W. K. Chu, J. Y. Lin, H. X. Jiang, Judy Wu   +6 more
openalex   +1 more source

Integrating Automated Electrochemistry and High‐Throughput Characterization with Machine Learning to Explore Si─Ge─Sn Thin‐Film Lithium Battery Anodes

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A closed‐loop, data‐driven approach facilitates the exploration of high‐performance Si─Ge─Sn alloys as promising fast‐charging battery anodes. Autonomous electrochemical experimentation using a scanning droplet cell is combined with real‐time optimization to efficiently navigate composition space.
Alexey Sanin, Jackson K. Flowers, Tobias H. Piotrowiak, Frederic Felsen, Leon Merker, Alfred Ludwig, Dominic Bresser, Helge Sören Stein   +7 more
wiley   +1 more source

A Pathway to High-Quality Heteroepitaxial Ga₂O₃ Films via Metalorganic Chemical Vapor Deposition. [PDF]

Micromachines (Basel)
Li Y, Zhang Y, Wang K, Peng G, Xu S, Feng Q, Ma J, Yao Y, Hao Y, Zhang J.   +9 more
europepmc   +1 more source

Optical polarization anisotropy in strained A‐plane GaN films on R‐plane sapphire

, 2006
Sandip Ghosh, P. Misra, H. T. Grahn, Bilge Imer, Shuji Nakamura, Steven P. DenBaars, James S. Speck   +6 more
openalex   +2 more sources

Real‐time fault detection in multicomponent nuclear‐waste slurries through data fusion of spectroscopic sensors

AIChE Journal, EarlyView.
Abstract Three instruments–Raman spectroscopy, attenuated total reflectance–Fourier transform infrared spectroscopy, and focused beam reflectance measurement–were used to detect sensor faults, mixing faults, and unanticipated chemistry in a system of multicomponent slurries.
Steven H. Crouse, Ronald W. Rousseau, Martha A. Grover   +2 more
wiley   +1 more source