Results 201 to 210 of about 148,707 (321)

TWO-LAYER SAPPHIRE RECTANGULAR DIELECTRIC RESONATOR ANTENNA FOR RUGGED COMMUNICATIONS

, 2019
Garima Bakshi, Arti Vaish, Rajveer S. Yaduvanshi   +2 more
openalex   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, EarlyView.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Chiral Plasmonic Surface Temperature Switching by Several Tens of Kelvins in Titanium Nitride Nanostructures. [PDF]

Nano Lett
Setoura K, Oshikiri T, Tamura M, Morita K, Fujiwara H, Ishii S, Fujii Y, Matsuo Y, Iida T, Imura K.   +9 more
europepmc   +1 more source

Enhanced Output Power Of Gan-Based Leds With Nano-Patterned Sapphire Substrates

, 2008
J. J. Chen, Y. K. Su, C. L. Lin, S. M. Chen, W. L. Li, C. C. Kao   +5 more
openalex   +2 more sources

α-Al2O3 sapphire and rubies deformed by dual basal slip at intermediate temperatures (900–1300 °C) [PDF]

, 2009
Miguel Castillo‐Rodríguez, J. Castaing, A. Muñoz, P. Veyssière, A. Domı́nguez-Rodrı́guez   +4 more
openalex   +1 more source

Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering

Advanced Electronic Materials, EarlyView.
Single‐domain κ‐Ga2O3 is systematically studied using advanced Raman spectroscopy, revealing over 100 Raman‐active phonon modes. These modes are compared with theoretical predictions and organized within a newly established nomenclature, offering a robust reference for future research.
Alwin Wüthrich, Benjamin M. Janzen, Roland Gillen, Hans Tornatzky, Andrea Ardenghi, Oliver Bierwagen, Anna Sacchi, Piero Mazzolini, Maximilian Ries, Temma Ogawa, Hiroyuki Nishinaka, Markus R. Wagner   +11 more
wiley   +1 more source

Evidence of air-induced surface transformation of atomic step-engineered sapphire in relation to epitaxial growth of 2D semiconductors. [PDF]

Nat Commun
Fu W, Chai J, Kawai H, Maddumapatabandi T, Bussolotti F, Huang D, Lee R, Teo SL, Tan HR, Wong CPY, Sng A, Chen Y, Lau CS, Zhang M, Medina H, Lin M, Bosman M, Goh KEJ.   +17 more
europepmc   +1 more source

An electrochemical cell with sapphire windows foroperandosynchrotron X-ray powder diffraction and spectroscopy studies of high-power and high-voltage electrodes for metal-ion batteries [PDF]

, 2018
Oleg A. Drozhzhin, Ivan V. Tereshchenko, Hermann Emerich, Evgeny V. Antipov, Artem M. Abakumov, Dmitry Chernyshov   +5 more
openalex   +1 more source

Tunable Dual‐Photoconductivity in VS2 Films

Advanced Electronic Materials, EarlyView.
In this work, VS2 thin films are synthesized via chemical vapor deposition for photodetector applications and the fabricated devices demonstrated tunable dual‐photoconductivity effect mediated by CO2 adsorption and light‐assisted desorption. This work highlights the profound influence of gas adsorption on the photoconductivity behavior of VS2 films ...
Zhihua Cheng, Tengfei Lu, Chaoyu Chen, Hualong Tao, Zhiqiang Li, Yao Liang, Yongqing Cai, Tianming Lv, Zhiguang Sun, Liyan Zhang, Ying Wang, Baoting Quan, Zheng Wei, Zhihua Zhang   +13 more
wiley   +1 more source

Substrate Orientation-Dependent Synaptic Plasticity and Visual Memory in Sol-Gel-Derived ZnO Optoelectronic Devices. [PDF]

Materials (Basel)
Jeon D, Lee SH, Cho J, Kim KB, Lee SN.
europepmc   +1 more source