Results 241 to 250 of about 42,237 (297)
Room‐temperature mid‐infrared (MIR) detectors are demonstrated using lithium niobate surface acoustic wave phononic crystal oscillators integrated with metasurface absorbers. The devices exhibit rapid thermal response and simplified fabrication compared to suspended resonators.
Zichen Xi+11 more
wiley +1 more source
Crystallographic Engineering of CrN Buffer Layers for GaN Thin Film Epitaxy. [PDF]
Shim KY+6 more
europepmc +1 more source
Micro‐LEDs with a novel metal‐insulator‐semiconductor (MIS) sidewall structure enable bias control of surface recombination and efficiency. Applying a positive sidewall voltage improves more than 50% EQE at low current density and achieves a record‐high 53.9% EQE.
Jian Yin+5 more
wiley +1 more source
Hypersonic acoustic wave control via stealthy hyperuniform phononic nanostructures. [PDF]
Diego M+6 more
europepmc +1 more source
Experimental Study on Polymer–Polymer Interfacial Thermal Resistance
Interfacial thermal resistance (ITR) in polymer–polymer interfaces is experimentally measured in this paper by the multi‐layered bulk sample approach. Based on numerical simulation and experimental verification, new techniques of layer‐overlapping samples are developed.
Yinfeng Xia+2 more
wiley +1 more source
Design of Real-Time Demodulation for FBG Sensing Signals Based on All-Dielectric Subwavelength Gratings Edge Filters. [PDF]
Lin J+5 more
europepmc +1 more source
In this review, sputter epitaxy is highlighted as a key technique for growing transition metal nitrides such as NbN and ScAlN. By integrating these materials with nitride semiconductors, hybrid devices showing both superconducting and ferroelectric properties can be realized.
Atsushi Kobayashi+4 more
wiley +1 more source
Large-scale alkali-assisted growth of monolayer and bilayer WSe<sub>2</sub> with a low defect density. [PDF]
Chou SA+16 more
europepmc +1 more source
In this work, ammonia source molecular beam epitaxy is explored as an alternative technique to grow ScAlN/GaN high electron mobility transistor heterostructures on a silicon substrate. A transistor with a maximum drain current superior to 1 A mm−1 has been fabricated on a 23 nm thick ScAlN barrier.
Caroline Elias+4 more
wiley +1 more source
Operando Scanning Electron Microscopy Study of Support Interactions and Mechanisms of Salt-Assisted WS2 Growth. [PDF]
Yang J+7 more
europepmc +1 more source