Results 241 to 250 of about 42,237 (297)

Room‐Temperature Mid‐Infrared Detection Using Metasurface‐Absorber‐Integrated Phononic Crystal Oscillator

open access: yesLaser &Photonics Reviews, EarlyView.
Room‐temperature mid‐infrared (MIR) detectors are demonstrated using lithium niobate surface acoustic wave phononic crystal oscillators integrated with metasurface absorbers. The devices exhibit rapid thermal response and simplified fabrication compared to suspended resonators.
Zichen Xi   +11 more
wiley   +1 more source

Crystallographic Engineering of CrN Buffer Layers for GaN Thin Film Epitaxy. [PDF]

open access: yesMaterials (Basel)
Shim KY   +6 more
europepmc   +1 more source

Metal‐Insulator‐Semiconductor Structure‐Based InGaN/GaN Micro‐Light‐Emitting Devices with Superior External Quantum Efficiency

open access: yesLaser &Photonics Reviews, EarlyView.
Micro‐LEDs with a novel metal‐insulator‐semiconductor (MIS) sidewall structure enable bias control of surface recombination and efficiency. Applying a positive sidewall voltage improves more than 50% EQE at low current density and achieves a record‐high 53.9% EQE.
Jian Yin   +5 more
wiley   +1 more source

Hypersonic acoustic wave control via stealthy hyperuniform phononic nanostructures. [PDF]

open access: yesSci Adv
Diego M   +6 more
europepmc   +1 more source

Experimental Study on Polymer–Polymer Interfacial Thermal Resistance

open access: yesMacromolecular Theory and Simulations, Volume 34, Issue 2, March 2025.
Interfacial thermal resistance (ITR) in polymer–polymer interfaces is experimentally measured in this paper by the multi‐layered bulk sample approach. Based on numerical simulation and experimental verification, new techniques of layer‐overlapping samples are developed.
Yinfeng Xia   +2 more
wiley   +1 more source

Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics

open access: yesphysica status solidi (a), EarlyView.
In this review, sputter epitaxy is highlighted as a key technique for growing transition metal nitrides such as NbN and ScAlN. By integrating these materials with nitride semiconductors, hybrid devices showing both superconducting and ferroelectric properties can be realized.
Atsushi Kobayashi   +4 more
wiley   +1 more source

Large-scale alkali-assisted growth of monolayer and bilayer WSe<sub>2</sub> with a low defect density. [PDF]

open access: yesNat Commun
Chou SA   +16 more
europepmc   +1 more source

ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate

open access: yesphysica status solidi (a), EarlyView.
In this work, ammonia source molecular beam epitaxy is explored as an alternative technique to grow ScAlN/GaN high electron mobility transistor heterostructures on a silicon substrate. A transistor with a maximum drain current superior to 1 A mm−1 has been fabricated on a 23 nm thick ScAlN barrier.
Caroline Elias   +4 more
wiley   +1 more source

Operando Scanning Electron Microscopy Study of Support Interactions and Mechanisms of Salt-Assisted WS2 Growth. [PDF]

open access: yesChem Mater
Yang J   +7 more
europepmc   +1 more source

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