Results 271 to 280 of about 42,237 (297)
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Sapphire smart scalpel

Bulletin of the Russian Academy of Sciences: Physics, 2009
A new type of surgical instruments—sapphire scalpel with an opportunity of simultaneous resection and fluorescent diagnostics of a resected tissue state close to the cutting edge, allowing the surgeon to differ between the cancerous and normal tissues during operation—has been developed.
V. N. Kurlov   +4 more
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Fracture of Sapphire [PDF]

open access: possibleJournal of the American Ceramic Society, 1969
The fracture of sapphire was studied using the double‐canti‐lever‐cleavage technique. Fracture surface energies were 7.3 and 6.0 J/m2 for the (100) and (012) type planes, respectively. Attempts to measure the fracture surface energy on the (0001) plane were unsuccessful.
openaire   +1 more source

Properties of Sapphire [PDF]

open access: possible, 2009
Mirror-turn axis of the sixth order (ternary inversion axis) Three axes of the second order normal to it Three symmetry planes normal to the axes of the second order and intercrossing along the axis of the highest order Symmetry ...
Leonid A. Lytvynov   +2 more
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Application of Sapphire

2009
As far back as the tenth century BC , sapphires and rubies were valued as gems on the level of diamonds. Artificial sapphires were first used in jewelry art as well, but from the beginning of the twentieth century sapphire has played an increasingly significant role in engineering.
Valerian Pishchik   +2 more
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Origin of Voids at the Interface of Wafer Bonded Sapphire on Sapphire

MRS Proceedings, 2000
AbstractTwo sapphire (Al2O3, r-cut) wafers were bonded at room temperature. The bonding energy increased during heating up to 1100 °C. The interface was investigated by plan-view and cross-section TEM. The bonding strength after heating to 1100 °C is similar to the bulk bonding strength. A high density of voids at the bonded interface was observed. The
Nikolai Zakharov   +2 more
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Patterning of sapphire/GaN substrates

physica status solidi c, 2011
AbstractWe present the results of sapphire/GaN substrate patterning on GaN film quality and on LED performance. MOVPE was used to grow GaN films on c‐plane sapphire. The films were then patterned with hexagonal holes with various diameters. When regrown with GaN, voids were formed in the sapphire/GaN interface.
Ali, Muhammad   +9 more
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Crack formation in sapphire/niobium/sapphire joints under compression

Journal of Materials Science, 2000
Compression tests were carried out on UHV diffusion bonded single crystalline sapphire/Nb/sapphire joints to investigate their mechanical properties, the mechanisms that lead to the failure of the joints and the dislocation-interface interaction.
Manfred Rühle   +3 more
openaire   +2 more sources

ChemInform Abstract: OXYGEN DIFFUSION IN SAPPHIRE

Chemischer Informationsdienst, 1982
AbstractAl2O3‐Einkristalle wurden nach verschiedenen Methoden hergestellt und dem Austausch mit O2‐Gas (1 at) mit ′SO‐Anreicherung ausgesetzt.
K. P. R. Reddy, Alfred R. Cooper
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Optical resistance of sapphire

Journal of Materials Science, 1993
Single-crystals of α-Al2O3 were subjected to multi-stage polishing with diamond powder of successively decreasing grain size. After each stage of polishing, the infrared reflection spectra were recorded and the nanosecond laser resistance at 1.06 μm was measured. The laser induced damage data were also obtained for natural face, annealed and ion-etched
A. E. Chmel   +3 more
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Ion Milling of Sapphire

Journal of The Electrochemical Society, 2005
The ion milling of sapphire is a complicated operation due to several characteristics of the material itself. It is a relatively hard transparent nonconductive crystalline material that does not transfer heat nearly as well as metals that have been successfully ion milled in the past.
Kenneth A. Herren, Don A. Gregory
openaire   +2 more sources

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