Results 61 to 70 of about 148,707 (321)

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

Applied Sciences, 2018
This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group.
Yosuke Nagasawa, Akira Hirano
doaj   +1 more source

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

Crystals, 2020
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji, Elke Meissner, Roland Weingärtner, Sven Besendörfer, Jochen Friedrich   +4 more
doaj   +1 more source

Correlation between birefringence and absorption mapping in large-size Sapphire substrates for gravitational-wave interferometry [PDF]

, 2023
S. Zeidler, M. Eisenmann, M. Bazzan, Pengbo Li, M. Leonardi   +4 more
openalex   +1 more source

Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS2–MoS2 Lateral Heterostructures

Advanced Functional Materials, EarlyView.
Surface potential distribution image, along with the derived electric field distribution across the interface, reveals that the electric field reaches its peak at the interface. Additionally, the spectral response of the heterointerface exhibits higher and broader features compared to its bare counterparts.
Pargam Vashishtha, Clara Kofler, Ajay Kumar Verma, Sindhu Priya Giridhar, Jonathan O. Tollerud, Nethmi S. L. Dissanayake, Tanish Gupta, Manoj Sehrawat, Vishnu Aggarwal, Edwin L.H. Mayes, Billy J. Murdoch, Deepak Sharma, Taimur Ahmed, Jani Kotakoski, Jeffrey A. Davis, Yuerui Lu, Govind Gupta, Irfan H. Abidi, Sumeet Walia   +18 more
wiley   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

Advanced Functional Materials, EarlyView.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert, Ali Barooni, Benjamin Gregory, Paul Malinowski, Anirudh Tenneti, Sonia Hasko, Brenan Palazzolo, Jeffrey W Hodgson, Brendan Faeth, Patrick M. Woodward, Kyle M. Shen, Andrej Singer, Maryam Ghazisaeidi, Salva Salmani‐Rezaie, Darrell G. Schlom, Kaveh Ahadi   +15 more
wiley   +1 more source

Low noise cryogenic dielectric resonator oscillator [PDF]

, 1988
A microwave oscillator is provided which can operate at a temperature of many degrees above absolute zero while providing very low phase noise that has heretofore generally required temperatures within a few degrees K.
Dick, G. John
core   +1 more source

Rotational Reconstruction of Sapphire (0001)

, 1997
The structure of the $(\sqrt{31}\times \sqrt{31})R\pm9^\circ$ reconstructed phase on sapphire (0001) surface is investigated by means of a simulation based on the energy minimization.
Ashcroft, Chen, Finnis, Fisher, French, Fre´de´ric Lanç¸on, Gautier, Igor Vilfan, Jacques Villain, Manassidis, McTague, Novaco, Renaud, Shaw, Sutton, Tasker, Todd, Toney, Vermeersch, Wu   +19 more
core   +2 more sources

Emerging 2D Materials and Their Hybrid Nanostructures for Label‐Free Optical Biosensing: Recent Progress and Outlook

Advanced Functional Materials, EarlyView.
This review highlights recent advances in label‐free optical biosensors based on 2D materials and rationally designed mixed‐dimensional nanohybrids, emphasizing their synergistic effects and novel functionalities. It also discusses multifunctional sensing platforms and the integration of machine learning for intelligent data analysis.
Xinyi Li, Yonghao Fu, Yuehe Lin, Dan Du
wiley   +1 more source

Interface Characteristics of Sapphire Direct Bonding for High-Temperature Applications

Sensors, 2017
In this letter, we present a sapphire direct bonding method using plasma surface activation, hydrophilic pre-bonding, and high temperature annealing. Through the combination of sapphire inductively coupled plasma etching and the direct bonding process, a
Wangwang Li, Ting Liang, Yulei Chen, Pinggang Jia, Jijun Xiong, Yingping Hong, Cheng Lei, Zong Yao, Lei Qi, Wenyi Liu   +9 more
doaj   +1 more source

Controlling the Frequency-Temperature Sensitivity of a Cryogenic Sapphire Maser Frequency Standard by Manipulating Fe3+ Spins in the Sapphire Lattice

, 2012
To create a stable signal from a cryogenic sapphire maser frequency standard, the frequency-temperature dependence of the supporting Whispering Gallery mode must be annulled.
A. E. Siegman, D. L. Creedon, D. L. Creedon, J.-M. Le Floch, K. Benmessai, L. S. Kornienko, M. E. Tobar, M. Mrad, P.-Y. Bourgeois, V. Giordano, Y. Kersalé   +10 more
core   +3 more sources