Results 221 to 230 of about 485,831 (293)

Balancing Electrons to Break the Activity‐Selectivity Trade‐Off in H2O2 Electrosynthesis

open access: yesAdvanced Functional Materials, EarlyView.
Carrier‐concentration balancing in CuS is achieved by coupling cobalt dopants with cobalt vacancies, converting CuS from p‐ to n‐type to accelerate 2e− ORR while withdrawing excess carriers to optimize *OOH binding for H2O2 desorption. The catalyst reaches 8.14 mol g−1 h−1 with >84% selectivity in 1.0 M KOH and drives robust electro‐Fenton dye ...
Hangning Liu   +11 more
wiley   +1 more source

Regionally Localized Electrolyte Engineering via UV Crosslinking for Stable Ether–Carbonate Lithium Metal Batteries

open access: yesAdvanced Functional Materials, EarlyView.
This work introduces a regionally localized electrolyte (RLE) that spatially separates ether‐ and carbonate‐based functions to stabilize both Li metal and high‐voltage cathodes. An immobilized ether‐rich layer directs Li+ transport, activates LiNO3 locally, and forms a uniform LiF‐rich SEI, enabling lower overpotential, uniform deposition, and long ...
Eunbin Lim   +4 more
wiley   +1 more source

MMDEC: Multimodal maritime dataset on the English channel. [PDF]

open access: yesData Brief
Averty T, Nasios I, Ray C, Piliouras N.
europepmc   +1 more source

Revealing the Hidden Role of Cd in p‐Type Mg3Sb2: Enhanced Thermoelectric Performance by Grain Boundary Segregation Engineering

open access: yesAdvanced Functional Materials, EarlyView.
The hidden role of Cd segregation at grain boundaries is revealed in p‐type Mg3Sb2 by atom probe tomography and other advanced characterizations. Grain boundary Cd enrichment suppresses the SbMg+ hole‐killer formation and lowers potential barriers, enhancing electrical conductivity.
Zhou Li   +12 more
wiley   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li   +5 more
wiley   +1 more source

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