Results 31 to 40 of about 2,538 (190)

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Nanoscale Research Letters, 2019
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 106 cm ...
Hong Gu, Feifei Tian, Chunyu Zhang, Ke Xu, Jiale Wang, Yong Chen, Xuanhua Deng, Xinke Liu   +7 more
doaj   +1 more source

Novel Translational Read-through–Inducing Drugs as a Therapeutic Option for Shwachman-Diamond Syndrome

Biomedicines, 2022
Shwachman-Diamond syndrome (SDS) is one of the most commonly inherited bone marrow failure syndromes (IBMFS). In SDS, bone marrow is hypocellular, with marked neutropenia.
Valentino Bezzerri, Laura Lentini, Martina Api, Elena Marinelli Busilacchi, Vincenzo Cavalieri, Antonella Pomilio, Francesca Diomede, Anna Pegoraro, Simone Cesaro, Antonella Poloni, Andrea Pace, Oriana Trubiani, Giuseppe Lippi, Ivana Pibiri, Marco Cipolli   +14 more
doaj   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

Advanced Functional Materials, EarlyView.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng, Jiawen Zhang, Peng Gao, Guosong Zeng, Xufei Fang, Wenjun Lu   +5 more
wiley   +1 more source

Accelerating Discovery to Deployment: Argonne's Materials Engineering Research Facility (MERF) and Its Role in Scaling Materials Technologies for Water and Resource Solutions

Advanced Materials Technologies, EarlyView.
In this Perspective, we highlight the processing science and scale‐up capabilities of the Materials Engineering Research Facility (MERF) at the U.S. Department of Energy's Argonne National Laboratory, with an emphasis on practical solutions for sustainable water and critical resource recovery. We demonstrate how national laboratories bridge fundamental
Yuepeng Zhang, Bratin Sengupta, Xiaoao Shi, Haihui Pu, Jeffrey W. Elam, Gregory K. Krumdick, Jessica Durham Macholz, Allison Bennett Irion, Junhong Chen, Seth B. Darling   +9 more
wiley   +1 more source

Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

Advanced Science, EarlyView.
A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo, Sunjae Kim, Ji‐Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang, Jinyoung Hwang   +5 more
wiley   +1 more source

Identifying Emergency Department Symptom-Based Diagnoses with the Unified Medical Language System

Western Journal of Emergency Medicine, 2019
Introduction: Many patients who are discharged from the emergency department (ED) with a symptom-based discharge diagnosis (SBD) have post-discharge challenges related to lack of a definitive discharge diagnosis and follow-up plan.
Benjamin H. Slovis, Danielle M. McCarthy, Garrison Nord, Amanda MB Doty, Katherine Piserchia, Kristin L. Rising   +5 more
doaj   +1 more source

Shwachman-Diamond syndromes: clinical, genetic, and biochemical insights from the rare variants

Haematologica, 2023
Shwachman-Diamond syndrome is a rare inherited bone marrow failure syndrome characterized by neutropenia, exocrine pancreatic insufficiency, and skeletal abnormalities. In 10-30% of cases, transformation to a myeloid neoplasm occurs.
Nozomu Kawashima, Usua Oyarbide, Marco Cipolli, Valentino Bezzerri, Seth J. Corey   +4 more
doaj   +1 more source

Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures

Advanced Science, EarlyView.
A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong, Xiliang Luo, Qunsi Yang, Yibo Hu, Jieshi Chen, Lihui Song, Deren Yang, Xiaodong Pi   +7 more
wiley   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

Advanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo   +4 more
wiley   +1 more source

Schottky barrier heights and electronic transport in Ga2O3 Schottky diodes

Materials Research Express, 2023
The Schottky contact, formed at the interface between a metal and a semiconductor, is instrumental in defining the electrical properties of Schottky barrier diodes (SBDs).
Min-Yeong Kim, Dong-Wook Byun, Geon-Hee Lee, Sujitra Pookpanratana, Qiliang Li, Sang-Mo Koo   +5 more
doaj   +1 more source